AIKW30N60CTXKSA1 IGBT Transistor, 600V 30A, TO-247 Package

  • Functions as a power transistor, enabling efficient switching and control in electronic circuits.
  • Features a TO-247 package, offering a balance of thermal performance and straightforward mounting on PCBs.
  • Compact package design helps save board space in dense power electronics assemblies.
  • Suitable for use in industrial power supplies, delivering dependable operation under demanding conditions.
  • Designed for consistent performance, aiding in stable and reliable circuit functionality over time.
SKU: AIKW30N60CTXKSA1 Category: Brand:
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产品上方询盘

AIKW30N60CTXKSA1 Overview

The AIKW30N60CTXKSA1 is a silicon N-channel power MOSFET designed for high-voltage and high-efficiency switching applications. With its robust construction and fast switching characteristics, this device is well-suited for demanding industrial and commercial environments. Its combination of high voltage tolerance, efficient thermal performance, and reliable operation ensures dependable service in a wide range of power conversion and control systems. Learn more about this advanced semiconductor component at IC Manufacturer.

AIKW30N60CTXKSA1 Technical Specifications

Parameter Value
Type N-Channel MOSFET
Drain-Source Voltage (VDS) 600 V
Continuous Drain Current (ID) 30 A
RDS(on) (Max) 0.09 ??
Gate Charge (Qg) ÿ
Package / Case TO-247
Polarity N-Channel
Operating Temperature Range ÿ
Mounting Type Through Hole
Manufacturer Series ÿ

AIKW30N60CTXKSA1 Key Features

  • High Voltage Tolerance: Supports up to 600 V drain-source voltage, enabling use in industrial and high-power circuits where elevated voltages are present.
  • Significant Current Handling: Rated for 30 A continuous drain current, meeting requirements for power supplies and motor drive applications.
  • Low RDS(on): With a maximum on-resistance of only 0.09 ??, it minimizes conduction losses, improving overall system efficiency.
  • Robust Package: TO-247 through-hole design offers efficient heat dissipation and mechanical stability for reliable operation in demanding environments.

AIKW30N60CTXKSA1 Advantages vs Typical Alternatives

This N-channel MOSFET stands out due to its combination of high voltage capability and substantial current handling, while maintaining a low RDS(on) value. These attributes provide increased efficiency and lower thermal losses, resulting in enhanced reliability and performance when compared to standard MOSFETs in similar voltage classes. The TO-247 package further ensures optimal thermal management in power-intensive environments.

Typical Applications

  • Switch Mode Power Supplies (SMPS): The high voltage and current ratings make it well-suited for primary-side switching in industrial SMPS designs, where efficient energy conversion and compact form factors are essential.
  • Motor Drives: Can be used in variable frequency drives and inverters for controlling motors in automation and factory equipment, providing robust switching performance.
  • UPS Systems: Supports battery backup circuits and inverters in uninterruptible power supplies, helping ensure stable operation under variable loads.
  • Welding Equipment: Suitable for use in industrial welding machines, where high voltage and current switching reliability is required.

AIKW30N60CTXKSA1 Brand Info

The AIKW30N60CTXKSA1 is a power MOSFET product engineered for demanding industrial and power electronics applications. Manufactured using advanced silicon technology, it offers reliable and consistent performance across a range of operating conditions. The device??s robust through-hole package and high-voltage design reflect the manufacturer??s commitment to quality and performance in the semiconductor sector, making it a preferred choice for engineers seeking dependable power switching solutions.

FAQ

What is the maximum voltage the AIKW30N60CTXKSA1 can withstand?

This MOSFET is designed to handle a maximum drain-source voltage of 600 V, making it suitable for high-voltage industrial and commercial switching power applications.

What type of package does this device use?

The device is provided in a TO-247 through-hole package, which is known for its excellent heat dissipation characteristics and suitability for high-power applications.

What is the benefit of a low RDS(on) in this MOSFET?

A low on-resistance of 0.09 ?? helps reduce conduction losses during operation, which increases energy efficiency and decreases heat generation in the overall system design.

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产品中间询盘

In which applications is the AIKW30N60CTXKSA1 commonly used?

This component is typically found in switch mode power supplies, motor drives, uninterruptible power supplies, and industrial welding equipment, due to its high voltage and current ratings.

What mounting method is supported by this MOSFET?

This model is intended for through-hole mounting, ensuring secure placement and reliable electrical connections in circuit boards designed for power handling.

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