AIKP20N60CTAKSA1 N-Channel Power MOSFET, TO-220 Package, High Voltage Transistor

  • Designed as a power MOSFET, it enables efficient switching in high-voltage electronic circuits.
  • The device supports a fast switching speed, which reduces energy loss and improves overall system efficiency.
  • Its TO-220 package offers a compact footprint, allowing for easy integration into dense circuit boards.
  • Suitable for use in power supplies, this MOSFET helps regulate voltage and manage heat under load.
  • Manufactured to meet rigorous industry standards, ensuring consistent performance and operational safety.
SKU: AIKP20N60CTAKSA1 Category: Brand:
Infineon logo
产品上方询盘

AIKP20N60CTAKSA1 Overview

The AIKP20N60CTAKSA1 is a high-performance power MOSFET designed to deliver robust switching capabilities and high efficiency in industrial and commercial applications. As an N-channel device, it offers excellent switching speed and low on-state resistance, making it ideal for demanding power conversion environments. Its advanced silicon technology ensures reliable operation, even under high voltage and current conditions. Engineers and procurement specialists benefit from its combination of ruggedness, efficiency, and ease of integration, supporting streamlined system design and long-term reliability. Learn more from IC Manufacturer.

AIKP20N60CTAKSA1 Technical Specifications

Parameter Value
Transistor Polarity N-Channel
Drain-Source Voltage (Vds) 600 V
Continuous Drain Current (Id) 20 A
Rds(on) (Max) 160 mOhm
Gate Charge (Qg) 95 nC
Package / Case TO-220-3
Mounting Type Through Hole
Operating Temperature Range -55??C to 150??C

AIKP20N60CTAKSA1 Key Features

  • High voltage tolerance up to 600 V, enabling use in robust power management and conversion systems without compromising safety.
  • Low Rds(on) of 160 mOhm ensures minimized conduction losses, which translates to improved system efficiency for end-users.
  • Fast switching performance allows for higher frequency operation, supporting compact designs and reduced electromagnetic interference.
  • TO-220-3 package with through-hole mounting offers mechanical stability and simplifies thermal management in demanding environments.

AIKP20N60CTAKSA1 Advantages vs Typical Alternatives

This device stands out through its combination of high voltage capability, substantial continuous current support, and low on-resistance, making it superior in efficiency and thermal performance compared to standard MOSFETs. The integration of a robust TO-220-3 package further enhances heat dissipation and reliability, reducing the need for additional cooling solutions and simplifying board layouts for power engineers.

Typical Applications

  • Switching power supplies: The AIKP20N60CTAKSA1 is well-suited for high-frequency switching power supplies, where efficient energy conversion and reliable operation at elevated voltages are crucial for industrial and commercial equipment.
  • Motor drives: Its high current capability allows deployment in motor drive circuits for precision control of industrial motors and automation systems.
  • UPS systems: The device supports uninterruptible power supply (UPS) designs, ensuring consistent power delivery and robust switching during power events.
  • Lighting ballasts: Suitable for electronic lighting ballasts requiring reliable switching and high voltage standoff, supporting efficient lighting control and longevity.

AIKP20N60CTAKSA1 Brand Info

Engineered by a reputable manufacturer, the AIKP20N60CTAKSA1 represents a commitment to quality and performance in the high-voltage MOSFET market. Its optimized silicon design and industry-standard TO-220-3 package ensure ease of adoption in a variety of power management circuits. The product delivers consistent results for engineers seeking a balance between efficiency, reliability, and cost-effectiveness in their design projects.

FAQ

What is the maximum voltage the AIKP20N60CTAKSA1 can handle?

The device supports a maximum drain-source voltage of 600 V, making it suitable for high-voltage applications such as power supplies, motor drives, and industrial automation systems where voltage resilience is essential.

How does the low Rds(on) value benefit my design?

A low Rds(on) of 160 mOhm minimizes the voltage drop across the MOSFET during conduction, resulting in reduced power losses and improved overall system efficiency. This is especially valuable in applications where energy savings and thermal management are top priorities.

What package is offered and how does it impact assembly?

The product is available in a TO-220-3 through-hole package, which provides excellent heat dissipation and mechanical stability. This package type is widely used in power applications and is compatible with standard PCB assembly processes.

📩 Contact Us

产品中间询盘

Can this MOSFET operate in harsh temperature environments?

Yes. With an operating temperature range from -55??C to 150??C, it is designed to maintain reliable performance in both extreme cold and high-temperature industrial settings, supporting critical applications that demand durability.

Is this device suitable for high-frequency switching?

Absolutely. Its fast switching characteristics and moderate gate charge make it ideal for high-frequency operation, which is beneficial for compact, efficient, and low-noise power conversion systems found in modern electronics.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?