AIKBE50N65RF5ATMA1 IGBT Transistor 650V 50A TO-247 Infineon Power Module

AIKBE50N65RF5ATMA1 Overview

The AIKBE50N65RF5ATMA1 is a high-performance N-channel MOSFET designed for demanding switching and power management applications. Engineered for efficiency and reliability, this device offers low on-resistance and robust avalanche energy handling, making it suitable for industrial and high-voltage circuits. Its optimized structure enables fast switching, supporting higher system efficiencies and reduced losses. The device is housed in a TO-247 package, which provides enhanced thermal performance and mechanical stability for harsh environments. For engineers seeking a reliable and efficient solution, IC Manufacturer delivers this product to meet the exacting needs of modern power electronics.

AIKBE50N65RF5ATMA1 Technical Specifications

AIKBE50N65RF5ATMA1 Key Features

• High Drain-Source Voltage (650 V): Supports operation in circuits with substantial voltage swings, enhancing flexibility for high-voltage designs.
• Low On-Resistance (0.045 ??): Reduces conduction losses, resulting in improved energy efficiency and minimized heat generation in power supplies and motor drives.
• Robust Continuous Drain Current (50 A): Enables handling of significant load currents, making it reliable for demanding industrial and power conversion applications.
• TO-247 Package: Offers excellent thermal performance and mechanical robustness, ensuring reliable operation even in harsh environments.
• Fast Switching Performance: Optimized for high-speed switching, which is vital for modern power electronics and reduces switching losses.
• Wide Operating Temperature Range (-55??C to +150??C): Suitable for a broad spectrum of industrial and commercial environments.
• Through Hole Mounting: Provides secure and stable attachment to PCBs, beneficial for high-power applications requiring strong mechanical connections.

AIKBE50N65RF5ATMA1 Advantages vs Typical Alternatives

Compared to standard MOSFETs, this device stands out for its combination of high voltage capability, substantial continuous current rating, and low on-resistance. These features collectively enable more efficient power conversion, reduced thermal stress, and superior reliability. The robust TO-247 package further enhances thermal management, making it a preferred choice for engineers seeking dependable performance in industrial and power electronics applications.

Typical Applications

• Switch Mode Power Supplies (SMPS): The device’s low R_DS(on) and high voltage rating make it ideal for primary-side switching in high-efficiency SMPS designs, reducing losses and improving system performance.
• Motor Drives: Its high current capacity and fast switching enable precise control and efficient operation in industrial motor control circuits.
• Uninterruptible Power Supplies (UPS): Suitable for the high-voltage and high-current demands of UPS systems, ensuring reliable power backup and smooth transitions during outages.
• Renewable Energy Inverters: Supports the high voltage and current requirements of solar or wind power inverters, contributing to efficient energy conversion and system reliability.

AIKBE50N65RF5ATMA1 Brand Info

The AIKBE50N65RF5ATMA1 is manufactured by a trusted leader in semiconductor technology, recognized for delivering reliable and high-quality power management components. This device is part of a portfolio focused on efficient energy conversion and robust circuit protection, aligning with industry demands for advanced switching solutions. Designed to meet the needs of industrial, commercial, and renewable energy sectors, this product underscores the brand??s commitment to innovation, durability, and performance in power electronics.

FAQ

What is the maximum drain-source voltage supported by this MOSFET?

The device supports a maximum drain-source voltage of 650 V, making it suitable for high-voltage circuits and applications that require substantial voltage headroom for safety and operational flexibility.

Which applications benefit most from the use of this component?

It is especially well-suited for switch mode power supplies, motor drives, uninterruptible power supplies, and renewable energy inverters. These applications benefit from its high voltage and current handling, fast switching, and reliable thermal management.

How does the TO-247 package improve performance?

The TO-247 package offers enhanced heat dissipation and mechanical stability. This allows the device to maintain reliable operation under high-power conditions and in demanding industrial environments where robust thermal performance is critical.

What mounting style is used, and why is it important?

This product utilizes a through-hole mounting style, which ensures a strong mechanical bond to the PCB. This is vital for high-current, high-power applications, providing durability and reducing the risk of failures due to vibration or thermal cycling.

What is the benefit of a low R_DS(on) value in this MOSFET?

A low R_DS(on) value minimizes conduction losses, which directly improves the energy efficiency of the circuit. This results in less heat being generated, reducing the need for extensive cooling and enhancing system reliability over time.