AIKB50N65DF5ATMA1 Power MOSFET, 650V 50A, TO-247 Package, Infineon Transistor

  • Designed for efficient power switching, this component helps reduce energy loss in high-voltage applications.
  • Features an N-channel MOSFET structure, supporting fast switching speeds essential for responsive circuit performance.
  • Its TO-247 package offers a compact layout that simplifies thermal management on densely populated boards.
  • Widely used in industrial motor drivers, it ensures stable operation and precise control in demanding environments.
  • The AIKB50N65DF5ATMA1 model is built to maintain consistent operation over extended usage periods.
SKU: AIKB50N65DF5ATMA1 Category: Brand:
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AIKB50N65DF5ATMA1 Overview

The AIKB50N65DF5ATMA1 is a high-performance N-channel MOSFET designed for demanding industrial and power management applications. Featuring advanced silicon technology, this device offers robust switching characteristics, low conduction losses, and reliable operation under harsh conditions. Its optimized structure ensures superior efficiency, making it suitable for power conversion, motor drives, and other high-voltage switching environments. The compact package further supports high-density designs. For complete sourcing and further technical documentation, visit IC Manufacturer.

AIKB50N65DF5ATMA1 Technical Specifications

Attribute Value
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 650 V
Continuous Drain Current (ID) 50 A
RDS(on) (Max) 75 m??
Gate Charge (Qg) Not specified
Package / Case TO-247-3
Mounting Type Through Hole
Operating Temperature Range -55??C to 150??C
Polarity N-Channel

AIKB50N65DF5ATMA1 Key Features

  • High voltage tolerance of 650 V enables safe operation in high-voltage power conversion circuits, enhancing system reliability.
  • Capable of 50 A continuous drain current, supporting high current loads in industrial and motor control applications.
  • Low RDS(on) of 75 m?? minimizes conduction losses, improving overall energy efficiency and thermal performance.
  • TO-247-3 package offers robust thermal management and easy integration into standard PCB designs.

AIKB50N65DF5ATMA1 Advantages vs Typical Alternatives

This power MOSFET stands out for its combination of high drain current capability and low on-resistance, resulting in reduced power dissipation and improved efficiency. Its wide operating temperature range and enhanced voltage handling make it more suitable for challenging industrial environments compared to standard alternatives, ensuring greater reliability and system longevity through superior switching performance.

Typical Applications

  • Power supplies for industrial automation: The device??s high voltage and current ratings make it ideal for use in switching power supplies where efficient energy conversion and reliable operation are critical.
  • Motor drives: Suitable for driving motors in various industrial and commercial equipment, providing robust performance and thermal stability.
  • High-voltage inverters: Used in inverter circuits requiring fast switching and high efficiency at elevated voltages without compromising reliability.
  • Uninterruptible power systems (UPS): Ensures stable switching and power management in backup power solutions, supporting continuous operation during outages.

AIKB50N65DF5ATMA1 Brand Info

The AIKB50N65DF5ATMA1 is offered by a reputable semiconductor manufacturer known for delivering high-quality discrete power devices. Engineered for performance and durability, this MOSFET is a reliable choice for designers seeking to optimize power management and efficiency in demanding industrial and commercial systems. Its robust packaging and proven silicon process contribute to consistent results in high-stress environments.

FAQ

What is the maximum drain-source voltage supported by this MOSFET?

This device supports a maximum drain-source voltage of 650 V, allowing it to be used safely in high-voltage switching and power conversion circuits where insulation and voltage spikes are concerns.

What package type is available for this component?

The product is provided in a TO-247-3 through-hole package. This form factor is commonly used for high-power applications due to its ability to handle greater thermal loads and ease of mounting on standard PCBs.

How does the low on-resistance benefit system designers?

A low RDS(on) value of 75 m?? ensures minimal power loss during conduction, contributing to higher overall system efficiency and reduced heat generation??key advantages for power supply and motor control engineers.

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Is this MOSFET suitable for use in harsh environments?

Yes, the operating temperature range of -55??C to 150??C makes it suitable for demanding industrial environments. Designers can rely on its stable performance across a wide range of ambient conditions.

Can this device be used in motor drive and inverter applications?

Absolutely. Its high current capability, voltage tolerance, and efficient switching characteristics make it an excellent choice for motor drives and inverter circuits in industrial, commercial, and backup power systems.

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