AFV09P350-04NR3 Power MOSFET Transistor – High Efficiency, TO-220 Package

  • Provides efficient voltage regulation to ensure stable power supply in electronic circuits.
  • Features a compact package that saves board space and simplifies integration into designs.
  • Suitable for use in embedded systems requiring consistent performance under varying loads.
  • Designed to deliver reliable operation with quality control measures to minimize failures.
  • The model AFV09P350-04NR3 supports precise current handling for effective energy management.
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AFV09P350-04NR3 Overview

The AFV09P350-04NR3 is a high-performance power transistor designed for robust industrial and automotive applications. This component offers a maximum drain-source voltage of 350 V and a continuous drain current rating suitable for demanding switching and amplification tasks. With a low on-resistance, it ensures efficient power management and reduced thermal losses, enhancing overall system reliability. The device??s rugged construction and optimized electrical parameters make it an ideal choice for engineers seeking durable, high-efficiency semiconductor solutions. For more detailed information, visit IC Manufacturer.

AFV09P350-04NR3 Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)350V
Gate-Source Voltage (VGS)??30V
Continuous Drain Current (ID) at 25??C9A
Pulse Drain Current (IDM)36A
Static Drain-Source On-Resistance (RDS(on))0.04??
Power Dissipation (PD)89W
Gate Threshold Voltage (VGS(th))3.0?C5.0V
Operating Junction Temperature (TJ)-55 to 150??C

AFV09P350-04NR3 Key Features

  • High voltage capability: With a drain-source voltage rating of 350 V, this transistor excels in high-voltage switching applications, ensuring robust operation under demanding electrical conditions.
  • Low on-resistance: The device features a low RDS(on) of 0.04 ??, which minimizes conduction losses and improves energy efficiency in power circuits.
  • High continuous and pulse current ratings: Supports 9 A continuous and 36 A pulse currents, enabling it to handle transient loads and peak power demands reliably.
  • Wide operating temperature range: Rated for junction temperatures from -55 ??C to 150 ??C, suitable for harsh industrial and automotive environments.
  • Robust gate drive capability: Gate-source voltage tolerance of ??30 V allows flexible drive options and reduces risk of gate damage during operation.
  • High power dissipation: Capable of dissipating up to 89 W, supporting high power density designs without compromising thermal management.

AFV09P350-04NR3 Advantages vs Typical Alternatives

This device offers superior voltage handling and low on-resistance compared to typical alternatives, resulting in enhanced efficiency and reduced thermal stress. Its robust current ratings and wide operating temperature range contribute to higher reliability in industrial applications. The gate voltage tolerance ensures flexible integration with various driver circuits, making it a reliable choice for power management where accuracy and durability are critical.

Typical Applications

  • Industrial motor control systems requiring efficient high-voltage switching and reliable current handling capabilities for extended operational life.
  • Power supplies and inverters demanding low conduction losses and high power dissipation for improved energy efficiency.
  • Automotive electronics including DC-DC converters and powertrain modules benefiting from rugged components that tolerate wide temperature ranges.
  • Lighting ballast and consumer appliances needing robust MOSFETs for switching and amplification with minimal heat generation.

AFV09P350-04NR3 Brand Info

Produced by a leading semiconductor manufacturer, this transistor is engineered to meet the stringent requirements of modern industrial and automotive markets. The product line emphasizes quality, reliability, and performance, ensuring consistent operation in demanding environments. Designed with advanced fabrication technology, the device integrates seamlessly into power management and switching applications, backed by comprehensive technical support and extensive datasheet documentation.

FAQ

What is the maximum voltage this transistor can handle?

The transistor supports a maximum drain-source voltage of 350 V, making it suitable for high-voltage applications and ensuring safe operation within its rated limits.

How does the low on-resistance benefit my circuit design?

A low RDS(on) value of 0.04 ?? reduces conduction losses, which enhances overall energy efficiency and helps maintain lower device temperatures during operation, increasing reliability.

Can this device operate in harsh temperature environments?

Yes, it has an operating junction temperature range from -55 ??C up to 150 ??C, allowing it to function reliably in extreme industrial and automotive conditions without degradation.

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产品中间询盘

What are the current handling capabilities of this transistor?

The device can continuously handle drain currents up to 9 A and pulse currents up to 36 A, making it suitable for applications with transient power demands and steady-state loads.

Is this transistor compatible with standard gate drive voltages?

It supports gate-source voltages of ??30 V, accommodating a wide range of gate drive signals and providing flexibility in driver circuit design while protecting the gate from voltage spikes.

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