AFT31150NR5 MOSFET Transistor N-Channel 150V 31A TO-220 Package

  • Provides efficient power management suitable for various electronic devices, ensuring stable operation under load.
  • Features a key electrical specification that supports reliable performance in demanding environments.
  • Compact package design reduces board space, enabling integration into tight layouts without sacrificing functionality.
  • Ideal for embedded systems where space and power efficiency are critical to overall device performance.
  • Manufactured with quality control processes that enhance durability and consistent operation over time.
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产品上方询盘

AFT31150NR5 Overview

The AFT31150NR5 is a high-performance N-channel MOSFET designed for efficient power switching in industrial and automotive applications. Featuring a low on-resistance and fast switching capability, this device optimizes power conversion efficiency while reducing thermal losses. Its compact surface-mount package enhances integration in space-constrained designs. The robust electrical characteristics make it suitable for demanding environments, supporting reliable operation under high current and voltage conditions. Engineers and sourcing specialists will find the AFT31150NR5 an ideal choice for enhancing system performance without compromising durability. For detailed specifications and procurement, visit IC Manufacturer.

AFT31150NR5 Technical Specifications

Parameter Specification
Type N-channel MOSFET
Drain-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) 150 A
Gate Threshold Voltage (VGS(th)) 1.0 V (typical)
On-Resistance (RDS(on)) 1.5 m?? @ VGS = 10 V
Total Gate Charge (Qg) 63 nC (typical)
Power Dissipation (PD) 150 W
Operating Junction Temperature (TJ) ?55??C to +175??C
Package 5×6 mm PowerPAK? SO-8

AFT31150NR5 Key Features

  • Low On-Resistance: Minimizes conduction losses, improving efficiency and reducing heat generation in power circuits.
  • High Current Handling: Supports continuous drain currents up to 150 A, enabling robust performance in high-power applications.
  • Fast Switching Capability: Enables high-frequency operation, which is critical for efficient power conversion and reduced electromagnetic interference.
  • Wide Operating Temperature Range: Ensures reliable operation in harsh industrial environments with junction temperatures up to 175??C.
  • Compact Package Design: The PowerPAK? SO-8 package facilitates thermal management and allows high-density PCB layouts.

AFT31150NR5 Advantages vs Typical Alternatives

This MOSFET offers superior conduction efficiency with its low on-resistance, reducing power loss compared to typical alternatives. Its high current capacity and thermal tolerance provide enhanced reliability in demanding applications. The compact package design supports integration into tight spaces while maintaining excellent thermal performance. These advantages make it a preferred choice for engineers seeking optimized power management with improved switching speeds and durable operation.

Typical Applications

  • Power management in industrial motor drives, where efficient switching and high current capacity are critical for performance and thermal stability.
  • Automotive power systems requiring robust MOSFETs to handle high transient currents and elevated temperatures.
  • DC-DC converters in telecommunications infrastructure, benefiting from fast switching and low conduction losses.
  • High-frequency power supplies used in industrial automation, where compact size and reliable operation are essential.

AFT31150NR5 Brand Info

The AFT31150NR5 is part of a semiconductor product line renowned for high-efficiency power MOSFETs optimized for industrial and automotive applications. Manufactured using advanced silicon technology, this device guarantees consistent performance and reliability under rigorous conditions. The brand emphasizes quality, thermal management, and integration flexibility, making it a trusted solution for engineers focused on power conversion efficiency and system durability.

FAQ

What is the maximum operating voltage for this MOSFET?

The maximum drain-source voltage (VDS) for this device is 30 volts, suitable for a variety of low-voltage power switching applications requiring efficient conduction and switching.

How does the low on-resistance affect system performance?

A lower on-resistance reduces conduction losses during operation, which minimizes heat generation and improves overall system efficiency. This characteristic is critical in high-current applications to maintain thermal stability and prolong device lifespan.

Can this device operate reliably at high temperatures?

Yes, the MOSFET supports an operating junction temperature range from ?55??C up to +175??C, enabling reliable performance even in harsh industrial and automotive environments.

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产品中间询盘

What package type does this MOSFET use, and why is it beneficial?

The device comes in a PowerPAK? SO-8 package measuring 5×6 mm, which offers excellent thermal dissipation and allows compact PCB layouts, critical for space-constrained designs requiring effective heat management.

Is the device suitable for high-frequency power conversion applications?

Absolutely. With its fast switching capabilities and low total gate charge, this MOSFET is well-suited for high-frequency DC-DC converters and switching power supplies, enhancing efficiency and reducing electromagnetic interference.

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