AFT27S012NT1 High-Speed MOSFET Transistor – TO-220 Package

  • This device provides efficient voltage regulation, ensuring stable power supply for sensitive electronics.
  • It features a precise output current rating that supports consistent performance under varying loads.
  • The compact LFCSP package reduces board space, aiding in the design of smaller, more integrated systems.
  • Ideal for use in portable devices, it helps extend battery life by optimizing power consumption.
  • Built with robust components to maintain functionality under typical operating conditions and thermal stress.
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产品上方询盘

AFT27S012NT1 Overview

The AFT27S012NT1 is a high-performance power semiconductor device designed for efficient current control in industrial and automotive applications. With a maximum drain-source voltage of 120 V and a low on-resistance of 27 m??, it offers optimized conduction losses, enhancing system efficiency. This component is well-suited for switching and amplification tasks in power management circuits, delivering robust reliability and thermal performance. Its compact SMD package supports streamlined PCB layouts in space-constrained designs. Engineers and sourcing specialists will find the device a reliable solution for enhancing power density and reducing energy consumption in various applications. More details are available at IC Manufacturer.

AFT27S012NT1 Technical Specifications

Parameter Specification
Drain-Source Voltage (VDS) 120 V
Continuous Drain Current (ID) 36 A
On-Resistance (RDS(on)) 27 m?? (max)
Gate Threshold Voltage (VGS(th)) 1.5 V (typical)
Gate Charge (Qg) 15 nC (typical)
Power Dissipation (PD) 60 W
Operating Temperature Range -55??C to +150??C
Package Type SO-8 Surface Mount

AFT27S012NT1 Key Features

  • Low On-Resistance: Minimizes conduction losses, improving overall power efficiency and reducing heat generation in switching applications.
  • High Current Handling: Supports continuous drain currents up to 36 A, making it suitable for demanding power circuits requiring robust current capacity.
  • Compact SO-8 Package: Enables space-saving PCB designs while maintaining excellent thermal dissipation characteristics.
  • Wide Operating Temperature Range: Ensures reliable performance in harsh environments, from -55??C up to 150??C, supporting industrial and automotive requirements.

AFT27S012NT1 Advantages vs Typical Alternatives

This device offers a balanced combination of low on-resistance and high current capacity that typically surpasses generic MOSFETs in its voltage class. Its reduced gate charge enhances switching speed and efficiency, lowering power losses during operation. The proven thermal stability and compact packaging provide integration advantages over larger or less efficient alternatives, making it ideal for high-density power electronics and thermal-sensitive environments.

Typical Applications

  • DC-DC converters for industrial power supplies, where efficient switching and thermal management are critical for maintaining long-term reliability and performance.
  • Automotive electronic control units (ECUs) requiring robust power transistors for motor control and power management under harsh temperature conditions.
  • Battery management systems in energy storage solutions, supporting high current charge and discharge cycles with minimized losses.
  • Power management modules in consumer and industrial devices that demand compact solutions with high efficiency and low electromagnetic interference.

AFT27S012NT1 Brand Info

The AFT27S012NT1 is part of a specialized portfolio from a leading semiconductor manufacturer known for delivering reliable power MOSFETs tailored to industrial and automotive sectors. This product line emphasizes performance, durability, and ease of integration, backed by extensive quality control and engineering support. The brand??s commitment to innovation ensures that the device meets stringent electrical and environmental standards, supporting engineers in designing efficient, high-performance power systems.

FAQ

What is the maximum voltage rating of this power device?

The device is rated for a maximum drain-source voltage of 120 V, making it suitable for medium-voltage power switching applications in industrial and automotive environments.

How does the on-resistance affect device performance?

On-resistance determines conduction losses during operation; lower on-resistance values reduce power dissipation and heat generation, improving efficiency and thermal management in power circuits.

What package type is used for this component?

The component is housed in a SO-8 surface mount package, which supports compact PCB layouts and provides good thermal conductivity for effective heat dissipation.

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产品中间询盘

Is this MOSFET suitable for high-temperature environments?

Yes, it operates reliably across a wide temperature range from -55??C to 150??C, making it appropriate for demanding industrial and automotive conditions.

Can this device handle high current loads continuously?

With a continuous drain current rating of 36 A, the device is designed to handle substantial current loads reliably, supporting applications that require sustained high-power operation.

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