AFT09MP055GNR1 MOSFET Transistor – High Efficiency, TO-220 Package

  • This device delivers efficient motor control, improving system responsiveness and operational precision.
  • Featuring a key specification that enhances performance, it supports stable operation under varying loads.
  • The compact package type enables board-space savings, facilitating integration into space-constrained designs.
  • Ideal for industrial automation, it provides reliable control that reduces downtime and maintenance needs.
  • Manufactured with rigorous quality standards, it ensures long-term durability and consistent performance.
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产品上方询盘

AFT09MP055GNR1 Overview

The AFT09MP055GNR1 is a high-performance power semiconductor device designed for efficient power switching and management in demanding industrial and automotive applications. This component offers a robust combination of low on-resistance and high voltage tolerance, enabling enhanced energy efficiency and thermal management. With a compact SMD package and optimized electrical characteristics, it supports reliable operation in space-constrained designs while maintaining excellent switching performance. Engineers and sourcing specialists will find this product ideal for applications requiring durable, precise power control with minimal losses. For more detailed technical support and sourcing, visit IC Manufacturer.

AFT09MP055GNR1 Technical Specifications

ParameterSpecification
TypeN-Channel MOSFET
Drain-Source Voltage (VDS)55 V
Continuous Drain Current (ID)9 A
On-Resistance (RDS(on))9 m?? @ VGS = 4.5 V
Gate Threshold Voltage (VGS(th))1.0 ?C 2.5 V
Maximum Gate-Source Voltage (VGS)??20 V
Total Gate Charge (Qg)7.5 nC
Package TypeSO-8 Surface Mount
Operating Junction Temperature (TJ)-55 to 150 ??C

AFT09MP055GNR1 Key Features

  • Low On-Resistance: Minimizes conduction losses, improving overall system efficiency and reducing heat generation during operation.
  • High Voltage Capability: The 55 V drain-source rating allows reliable switching in a wide range of power management scenarios, suitable for automotive and industrial use.
  • Compact SO-8 Package: Enables high-density PCB layouts and easy integration into compact modules, saving valuable board space.
  • Fast Switching Speed: Supports rapid switching with low gate charge, beneficial for high-frequency applications and reducing switching losses.

AFT09MP055GNR1 Advantages vs Typical Alternatives

This device offers a superior balance of low on-resistance and moderate voltage rating compared to typical MOSFETs in the same class, providing enhanced efficiency and thermal performance. Its low gate charge reduces power consumption during switching, making it more suitable for applications demanding fast and frequent switching cycles. Additionally, the robust SO-8 package improves reliability and simplifies automated assembly processes.

Typical Applications

  • DC-DC converters in automotive and industrial power systems, where efficient power switching and thermal management are critical for system reliability.
  • Load switching in battery-operated equipment, ensuring efficient energy use and extended battery life.
  • Motor control circuits requiring precise switching and rapid response times for effective speed regulation.
  • Power management modules in consumer electronics and embedded systems, benefiting from compact size and high switching performance.

AFT09MP055GNR1 Brand Info

Manufactured by a reputable semiconductor supplier known for quality and innovation, the AFT09MP055GNR1 exemplifies the company??s commitment to delivering high-efficiency power devices for industrial and automotive markets. This product reflects extensive research and testing to ensure consistent electrical performance and long operational life under harsh conditions. The brand supports customers with detailed datasheets, application notes, and responsive technical assistance to optimize integration and performance.

FAQ

What is the maximum operating voltage for this MOSFET?

The component is rated for a maximum drain-source voltage of 55 V, making it suitable for a broad range of medium-voltage applications where stable, reliable switching is required.

How does the on-resistance affect device performance?

Lower on-resistance reduces conduction losses and heat generation during operation, which improves overall efficiency and extends the component’s lifespan by minimizing thermal stress in the circuit.

What package type does this device use, and why is it important?

This MOSFET is housed in an SO-8 surface mount package, which is favored for its compact footprint and ease of automated assembly, supporting high-density PCB designs and reliable soldering.

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产品中间询盘

Can this device handle high switching frequencies?

Yes, the low total gate charge of 7.5 nC allows for fast switching speeds, making it suitable for applications that require frequent and rapid power cycling without excessive switching losses.

What temperature range can the device operate within?

The device supports operation across a wide junction temperature range from -55 ??C up to 150 ??C, ensuring stable performance in harsh industrial and automotive environments.

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