AEDR-9820EA-100 Overview
The AEDR-9820EA-100 is a high-performance phototransistor designed for precise optical detection in industrial and electronic applications. Featuring a compact package and optimized spectral response, it delivers reliable and consistent performance for sensing near-infrared light. Its fast response time and low dark current make it ideal for applications requiring accurate light intensity measurement and signal conversion. Manufactured with high-quality materials, this phototransistor offers excellent linearity and stability under varying environmental conditions. Engineers and sourcing specialists will appreciate its compatibility with standard optoelectronic circuits and ease of integration. For more information, visit the IC Manufacturer.
AEDR-9820EA-100 Technical Specifications
Parameter | Specification |
---|---|
Phototransistor Type | NPN silicon phototransistor |
Peak Sensitivity Wavelength | 940 nm |
Collector-Emitter Voltage (VCEO) | 32 V (max) |
Collector Current (IC) | 20 mA (max) |
Response Time (Rise/Fall) | 5 ??s / 10 ??s (typical) |
Dark Current (ICEO) | 100 nA (max) |
Package Type | Flat TO-18 metal can |
Operating Temperature Range | -25??C to +85??C |
AEDR-9820EA-100 Key Features
- High sensitivity at 940 nm: Ensures precise detection of near-infrared light, critical for remote sensing and optical communication.
- Low dark current: Minimizes noise and enhances signal clarity, improving measurement accuracy especially in low-light conditions.
- Fast response time: Enables rapid switching and real-time detection, suitable for dynamic environments and high-speed applications.
- Robust metal can package: Provides excellent heat dissipation and mechanical durability, ensuring long-term operational reliability.
AEDR-9820EA-100 Advantages vs Typical Alternatives
This phototransistor offers superior sensitivity and lower dark current compared to typical silicon phototransistors, resulting in improved accuracy and reduced noise in optical sensing systems. Its fast response time provides an edge in applications requiring quick signal processing. The sturdy TO-18 packaging also enhances durability and thermal performance over plastic-encapsulated alternatives, making it a reliable choice for industrial and harsh environment deployments.
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Typical Applications
- Optical sensor systems for proximity detection and object counting, where accurate near-infrared light sensing is essential for reliable operation.
- Remote control receivers requiring fast and precise photodetection of modulated IR signals.
- Light intensity monitoring in automated systems and instrumentation.
- Optoelectronic circuits in communication devices that benefit from the device??s fast response and stable operation.
AEDR-9820EA-100 Brand Info
The AEDR-9820EA-100 is a product of a well-established line of phototransistors designed for industrial-grade optical sensing. Known for its consistent quality and performance, this component is manufactured under stringent quality control processes to meet demanding application requirements. It combines proven silicon phototransistor technology with a compact, rugged package to offer engineers a reliable solution for near-infrared detection challenges. The brand emphasizes compatibility with standard circuit designs and long-term stability, supporting a wide range of industrial and consumer electronic applications.
FAQ
What is the typical wavelength sensitivity of this phototransistor?
The device is optimized for peak sensitivity at 940 nm, which is in the near-infrared region. This makes it suitable for applications involving IR light detection such as remote controls and proximity sensors.
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What type of package does it use and why is this important?
It comes in a flat TO-18 metal can package, which offers excellent mechanical strength and thermal conductivity. This packaging type helps maintain stable operation over a wide temperature range and protects the phototransistor from environmental stresses.
How does the device perform in low-light conditions?
With a low dark current of up to 100 nA, the phototransistor minimizes noise and provides clearer signals, improving performance in low-light or weak-illumination scenarios where signal integrity is critical.
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What are the maximum voltage and current ratings?
The maximum collector-emitter voltage is 32 V, and the maximum collector current is 20 mA. These ratings ensure the device can operate safely within typical industrial signal detection circuits without damage.
Can this phototransistor be used for high-speed switching applications?
Yes, the typical rise time of 5 microseconds and fall time of 10 microseconds make this device suitable for applications requiring fast optical signal detection and switching, such as communication receivers and sensor arrays.