AEDR-8711-102 Overview
The AEDR-8711-102 is a high-performance phototransistor designed for precise optical sensing applications. Featuring a compact package and reliable photodetection capabilities, it offers engineers an efficient solution for converting light into electrical signals with minimal noise. This device operates effectively across a wide spectral range, ensuring stable performance in diverse industrial environments. Its robust design supports integration into optical communication, industrial automation, and safety systems, making it a versatile choice for demanding applications. For detailed product data and supply information, visit IC Manufacturer.
AEDR-8711-102 Technical Specifications
| Parameter | Specification |
|---|---|
| Phototransistor Type | NPN Silicon Phototransistor |
| Peak Sensitivity Wavelength | 940 nm |
| Collector-Emitter Voltage (VCEO) | 32 V (max) |
| Collector Current (IC) | 50 mA (max) |
| Dark Current (ICEO) | ?? 100 nA |
| Response Time (Rise/Fall) | 5 ??s / 7 ??s (typical) |
| Operating Temperature Range | -25 ??C to +85 ??C |
| Package Type | Transparent Molded Plastic, T-1 3/4 (5 mm) |
AEDR-8711-102 Key Features
- High Sensitivity at 940 nm: Optimized for near-infrared detection, this ensures accurate and reliable phototransistor operation in remote control and sensor applications.
- Low Dark Current: Minimizes noise, enabling precise signal processing and enhancing system performance in low-light conditions.
- Fast Response Time: Typical rise and fall times under 10 microseconds allow for high-speed switching and rapid detection in communication and automation systems.
- Wide Operating Temperature Range: Supports stable operation across industrial temperature extremes, improving reliability in harsh environments.
AEDR-8711-102 Advantages vs Typical Alternatives
This phototransistor offers superior sensitivity and fast response compared to standard devices, enhancing detection accuracy and speed. Its low dark current reduces background noise, an advantage in precision sensing. The robust voltage and current ratings ensure durability, while the compact package facilitates easy integration into tight spaces, making it a reliable and efficient choice for industrial optical sensing challenges.
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Typical Applications
- Optical remote controls and infrared communication systems, where precise light detection and fast response are critical for signal integrity and user experience.
- Industrial automation sensors requiring reliable photodetection under variable lighting and environmental conditions.
- Safety and security systems employing infrared sensing to detect motion or presence with high accuracy.
- Consumer electronics integrating infrared receivers for remote interface and control functions.
AEDR-8711-102 Brand Info
Manufactured with stringent quality controls, this phototransistor delivers consistent performance aligned with industry standards. The product line is well-established in the semiconductor market, known for reliability and precision. The transparent molded plastic package ensures optimal light transmission, supporting a wide range of optical sensing applications. This device exemplifies the brand??s commitment to providing robust and efficient components for demanding industrial and commercial electronic systems.
FAQ
What type of light does this phototransistor detect most effectively?
The device is optimized for near-infrared light detection, with peak sensitivity at 940 nm. This wavelength is commonly used in remote controls and optical communication, ensuring efficient photodetection in these applications.
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What are the maximum voltage and current ratings for safe operation?
The maximum collector-emitter voltage is 32 V, and the maximum collector current is 50 mA. Staying within these ratings ensures device longevity and stable performance during operation.
How does the low dark current benefit system performance?
Low dark current reduces the background noise that can interfere with signal clarity. This improves the signal-to-noise ratio, enabling more accurate detection of light signals, especially in low-light environments.
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Can this phototransistor be used in high-speed switching applications?
Yes, with typical rise and fall times of approximately 5 ??s and 7 ??s respectively, the device supports fast switching, suitable for applications requiring rapid response times such as optical communication and automated sensing.
What environmental conditions can this device operate under?
The phototransistor operates reliably within a temperature range from -25 ??C to +85 ??C, making it suitable for industrial environments where temperature variations are common.
