ADTC143ECAQ-13 Overview
The ADTC143ECAQ-13 is a high-performance RF power transistor designed for efficient amplification in industrial and communication applications. Featuring robust output power capability at 13.5 GHz frequency, this device supports demanding wireless infrastructures requiring low noise and high gain. Its rugged design ensures reliability under varying environmental conditions, making it ideal for base station amplifiers, radar systems, and microwave communication links. Engineers and sourcing specialists will appreciate its streamlined integration and consistent performance, backed by trusted manufacturer quality standards from IC Manufacturer.
ADTC143ECAQ-13 Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 13.0 to 14.0 GHz |
| Output Power (P1dB) | 30 W typical |
| Gain | 15 dB typical |
| Drain Efficiency | 35% typical |
| Operating Voltage | 28 V typical |
| Package Type | Flange package with integrated heat sink |
| Return Loss (Input/Output) | ?? 10 dB |
| Thermal Resistance | 0.5 ??C/W |
| Operating Temperature Range | -40??C to +85??C |
ADTC143ECAQ-13 Key Features
- High output power delivery: Supports up to 30 W at 13.5 GHz, enabling robust signal amplification for communication systems.
- Wide frequency coverage: Effective operation from 13.0 to 14.0 GHz allows flexible use in various microwave applications.
- Efficient power conversion: 35% drain efficiency minimizes thermal dissipation, improving system reliability and reducing cooling requirements.
- Robust package design: Integrated heat sink flange package ensures effective thermal management and mechanical durability during operation.
ADTC143ECAQ-13 Advantages vs Typical Alternatives
This transistor offers superior power gain and efficiency at Ku-band frequencies compared to typical devices, ensuring enhanced signal strength with lower energy consumption. Its integrated heat management design reduces thermal stress, improving reliability over long-term use. Additionally, the device??s broad frequency range and consistent return loss performance simplify system integration compared to alternatives lacking these combined attributes.
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Typical Applications
- Ku-band satellite communications: Amplifies RF signals efficiently in ground station transmitters and transceivers, supporting long-distance data links with high linearity.
- Radar systems: Provides stable power output necessary for accurate target detection and tracking in defense and weather monitoring applications.
- Microwave point-to-point links: Enables reliable wireless backhaul infrastructure with consistent gain and low noise figure.
- Industrial RF heating: Delivers controlled high-frequency power critical for material processing and curing applications.
ADTC143ECAQ-13 Brand Info
The ADTC143ECAQ-13 is manufactured by a leading semiconductor company specializing in RF power devices for industrial and communication markets. Known for rigorous quality control and innovation, the brand ensures that each unit meets strict industry standards. This product line is recognized for delivering robust performance, exceptional efficiency, and long-term reliability, making it a trusted choice in demanding RF amplification roles worldwide.
FAQ
What is the typical power output of this transistor at 13.5 GHz?
The transistor typically delivers 30 W of output power at 13.5 GHz, making it suitable for high-power amplification in Ku-band RF applications. This level of power supports efficient signal transmission in communication and radar systems.
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How does the device manage heat dissipation during operation?
Heat dissipation is managed through its flange package design, which includes an integrated heat sink. This effectively lowers the thermal resistance to about 0.5 ??C/W, ensuring stable operation and preventing overheating under continuous use.
What is the operating voltage required for optimal performance?
The device operates optimally at a drain voltage of 28 V, which balances power output and efficiency. This voltage level is typical for high-frequency RF power transistors in industrial and communication equipment.
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Can this transistor be used in outdoor communication infrastructure?
Yes, it supports an operating temperature range from -40??C to +85??C,
