A5G38H055NT4 Overview
The A5G38H055NT4 is a high-performance power MOSFET designed for efficient switching and robust operation in industrial and automotive applications. Featuring a low on-resistance and high current handling capability, this device enables designers to optimize power conversion and thermal management in compact system footprints. Its rugged construction ensures reliable switching performance under demanding conditions, making it an ideal choice for engineers focusing on power efficiency and system longevity. For detailed specifications and purchasing, visit IC Manufacturer.
A5G38H055NT4 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 55 | V |
| Continuous Drain Current (ID) | 38 | A |
| RDS(on) (Max) at VGS=10V | 0.0055 | ?? |
| Gate Threshold Voltage (VGS(th)) | 2 – 4 | V |
| Total Gate Charge (Qg) | 30 | nC |
| Power Dissipation (PD) | 120 | W |
| Operating Junction Temperature | -55 to 150 | ??C |
| Package Type | TO-220 | ?C |
A5G38H055NT4 Key Features
- Low On-Resistance: Minimizes conduction losses, improving overall system efficiency and reducing heat generation during operation.
- High Continuous Drain Current: Supports up to 38A, enabling reliable handling of significant loads in power conversion applications.
- Robust Thermal Performance: Designed to operate safely at junction temperatures up to 150??C, facilitating use in harsh environments without derating.
- Optimized Gate Charge: Low total gate charge allows faster switching speeds, resulting in improved frequency response and reduced switching losses.
A5G38H055NT4 Advantages vs Typical Alternatives
This device offers a competitive edge by combining low on-resistance with high current capacity, enhancing power efficiency relative to typical MOSFETs in its class. Its ability to maintain stable operation at elevated temperatures ensures reliability in industrial environments. Furthermore, the optimized gate charge reduces switching losses, increasing overall system performance when compared to alternatives with higher gate charge or less robust thermal ratings.
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Typical Applications
- Power management in industrial motor drives, where efficient switching and thermal stability are critical for continuous operation under variable loads.
- Automotive power regulation circuits requiring high current capability and ruggedness in harsh temperature conditions.
- DC-DC converters in telecommunications equipment, benefiting from fast switching and low conduction losses.
- Uninterruptible power supplies (UPS) and power inverters demanding reliable high-current MOSFETs to maintain system uptime and efficiency.
A5G38H055NT4 Brand Info
The A5G38H055NT4 is produced by a leading semiconductor manufacturer specializing in power devices for industrial and automotive markets. This product reflects the brand??s commitment to delivering high-quality, reliable MOSFETs optimized for demanding applications. It is part of a portfolio designed to meet stringent performance and safety standards, supporting engineers in developing efficient, long-lasting power systems.
FAQ
What is the maximum drain-source voltage rating of this MOSFET?
The device has a maximum drain-source voltage (VDS) rating of 55V, making it suitable for medium-voltage applications where reliable switching and voltage handling are essential.
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How does the low on-resistance benefit system performance?
Low on-resistance reduces conduction losses during the MOSFET??s on-state, which improves efficiency by minimizing wasted power as heat. This contributes to better thermal management and potentially smaller heat sinks.
Can this MOSFET operate in high-temperature environments?
Yes, it supports operation at junction temperatures up to 150??C, allowing it to function reliably in automotive or industrial settings where ambient temperatures can be elevated.
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What package type does this device use and why is it beneficial?
This model uses a TO-220 package, which offers excellent thermal dissipation and mechanical durability, making it easier to integrate into systems requiring effective heat management.
Is this MOSFET suitable for high-frequency switching applications?
With a total gate charge of 30nC, the MOSFET supports fast switching speeds, reducing switching losses and making it appropriate for applications such as DC-DC converters and motor drives that operate at higher frequencies.
