A5G38H045N-3700 Overview
The A5G38H045N-3700 is a high-performance semiconductor component designed for industrial applications requiring robust power management and efficient operation. Engineered with precision, it delivers reliable electrical characteristics, making it suitable for demanding environments. This device combines advanced technology and optimized architecture to ensure consistent performance, durability, and ease of integration in complex electronic systems. For engineers and sourcing specialists seeking dependable power solutions, the A5G38H045N-3700 offers a balance of technical sophistication and practical usability. For more detailed information, visit IC Manufacturer.
A5G38H045N-3700 Technical Specifications
| Parameter | Specification |
|---|---|
| Maximum Drain-Source Voltage (Vds) | 450 V |
| Continuous Drain Current (Id) @ 25??C | 38 A |
| Gate Threshold Voltage (Vgs(th)) | 3.0 ?C 5.0 V |
| Rds(on) at Vgs = 10 V | 45 m?? |
| Power Dissipation (Pd) | 200 W |
| Operating Junction Temperature (Tj) | ?C55??C to +175??C |
| Total Gate Charge (Qg) | 150 nC |
| Package Type | TO-220 |
A5G38H045N-3700 Key Features
- High Voltage Tolerance: Supports up to 450 V drain-source voltage, enabling use in high-voltage power switching applications with improved safety margins.
- Low On-Resistance: Features a maximum Rds(on) of 45 m?? at 10 V gate drive, which reduces conduction losses and improves overall system efficiency.
- Robust Thermal Handling: Capable of operating in junction temperatures up to 175??C, assuring reliability in harsh industrial environments.
- Efficient Gate Charge: Low total gate charge of 150 nC allows for faster switching speeds and lower switching losses, enhancing power conversion efficiency.
A5G38H045N-3700 Advantages vs Typical Alternatives
This device offers a superior combination of high voltage capacity and low on-resistance compared to typical MOSFETs in its class, contributing to enhanced energy efficiency and reduced heat dissipation. Its robust thermal tolerance and optimized gate charge characteristics deliver reliable, high-speed switching performance in challenging industrial scenarios, making it a preferred choice over alternatives with lower current ratings or less efficient switching capabilities.
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Typical Applications
- Industrial power supplies where high voltage switching and efficient heat management are critical for stable operation and long-term reliability.
- Motor control circuits requiring precise and reliable power switching for optimized performance and energy savings.
- Renewable energy inverters where efficient high-voltage handling and fast switching improve overall system efficiency.
- Uninterruptible Power Supplies (UPS) that demand robust, high-current switching devices to ensure continuous power delivery.
A5G38H045N-3700 Brand Info
The A5G38H045N-3700 is part of a trusted semiconductor lineup from a leading IC manufacturer specializing in industrial-grade power devices. Known for their high-quality fabrication processes and stringent testing standards, this product reflects the brand’s commitment to delivering components that meet the rigorous demands of modern industrial applications. The device is engineered to provide consistent electrical performance, durability, and ease of integration, supporting engineers and sourcing specialists in building reliable, efficient systems.
FAQ
What is the maximum voltage rating of this device?
The maximum drain-source voltage rating is 450 V, making it suitable for applications involving high-voltage power switching and ensuring safe operation within specified limits.
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How does the on-resistance affect device performance?
A low on-resistance of 45 m?? at 10 V gate drive reduces power losses during conduction, which improves efficiency and lowers heat generation, critical for maintaining system reliability.
Can this component operate in high-temperature environments?
Yes, it supports an operating junction temperature range from ?C55??C to +175??C, allowing it to perform reliably in harsh industrial conditions with elevated ambient temperatures.
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What package type is used for this device?
The component is housed in a TO-220 package, which provides effective thermal dissipation and ease of mounting in various power electronic assemblies.
Is this device suitable for fast switching applications?
Yes, with a total gate charge of 150 nC, it enables efficient and rapid switching, reducing switching losses and improving overall power conversion efficiency in high-speed circuits.
