A5G35S008NT6 Overview
The A5G35S008NT6 is a high-performance semiconductor device designed for industrial and automotive applications requiring robust power management and precise control. Engineered to deliver reliable operation under demanding conditions, this component integrates advanced features that optimize efficiency and stability. Its compact package supports space-saving designs, while the device??s electrical characteristics enable effective handling of voltage and current requirements typical in embedded systems. Sourcing specialists and engineers will appreciate its balance of performance, durability, and integration ease. For more information, visit IC Manufacturer.
A5G35S008NT6 Technical Specifications
| Parameter | Specification |
|---|---|
| Maximum Drain-Source Voltage (VDS) | 35 V |
| Continuous Drain Current (ID) | 8 A |
| Gate Threshold Voltage (VGS(th)) | 1.0 V (typical) |
| RDS(on) (Drain-Source On Resistance) | 8 m?? (max) |
| Gate Charge (Qg) | 10 nC (typical) |
| Power Dissipation (PD) | 30 W |
| Operating Temperature Range | -55 ??C to +150 ??C |
| Package Type | SO-8 |
A5G35S008NT6 Key Features
- Low On-Resistance: Minimizes conduction losses, improving overall system efficiency and reducing heat generation during operation.
- High Current Handling Capability: Supports continuous drain currents up to 8 A, making it suitable for medium power applications requiring stable performance.
- Wide Operating Temperature Range: Ensures reliable functionality in harsh industrial and automotive environments, enhancing system robustness.
- Compact SO-8 Package: Allows for high-density PCB layouts, optimizing space utilization in compact electronic designs.
A5G35S008NT6 Advantages vs Typical Alternatives
This device offers a superior balance of low on-resistance and high current capacity compared to typical MOSFETs in the same voltage class. Its efficient switching performance reduces power loss, while the robust thermal rating ensures dependable operation under stress. The compact SO-8 package facilitates easier integration into space-constrained designs, giving it a clear advantage in applications where both performance and footprint matter.
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Typical Applications
- Power management modules in automotive electronic control units, where precise current control and thermal stability are critical for safety and reliability.
- DC-DC converters requiring efficient switching components to maintain high power conversion efficiency.
- Industrial motor drivers that demand consistent performance and thermal endurance over extended operating periods.
- Embedded system power supplies where compact size and low power dissipation contribute to overall device miniaturization.
A5G35S008NT6 Brand Info
This product is part of the A5G series offered by a leading semiconductor manufacturer known for delivering high-quality MOSFET devices tailored to industrial and automotive markets. The component reflects the brand??s commitment to innovation, reliability, and performance, supporting engineers in developing efficient power solutions that meet stringent industry standards.
FAQ
What is the maximum voltage rating of this device?
The device supports a maximum Drain-Source Voltage of 35 V, making it suitable for applications operating within this voltage range without risk of breakdown.
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How does the on-resistance affect device performance?
On-resistance directly influences conduction losses; lower RDS(on) reduces power dissipation and heat generation, improving efficiency and extending the lifespan of the device in power applications.
Can this component operate in harsh temperature environments?
Yes, it is rated to operate reliably from -55 ??C up to +150 ??C, enabling use in demanding industrial and automotive settings where temperature extremes are common.
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What packaging options are available?
This device comes in a compact SO-8 package, which is widely used for space-saving designs and facilitates easy mounting on printed circuit boards.
Is this device suited for high-frequency switching applications?
With a typical gate charge of 10 nC, it offers efficient switching characteristics, making it appropriate for medium-frequency power conversion and motor control applications.




