A5G35S004NT6 High-Speed Signal Amplifier IC in SOT-23 Package

  • This component performs efficient signal processing to enhance system performance in embedded applications.
  • Operating frequency supports stable data transmission, ensuring reliable communication in demanding environments.
  • The compact CBZ package minimizes board space, facilitating integration into tight layouts and reducing overall device size.
  • Ideal for industrial automation systems, it helps maintain consistent operation under variable workload conditions.
  • Manufactured with stringent quality controls, the device ensures long-term durability and dependable functionality.
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产品上方询盘

A5G35S004NT6 Overview

The A5G35S004NT6 is a high-performance semiconductor device designed for power management and signal processing applications. Featuring robust electrical characteristics and optimized for efficiency, it supports demanding industrial and automotive environments where reliability and precision are critical. Its compact footprint and advanced integration enable system designers to enhance overall performance while minimizing board space. For engineers and sourcing specialists seeking a reliable solution with proven technical credentials, this product from IC Manufacturer offers a balanced combination of performance and durability.

A5G35S004NT6 Technical Specifications

Parameter Specification
Device Type Power MOSFET
Drain-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) 35 A
Gate Threshold Voltage (VGS(th)) 1.0 – 2.5 V
RDS(on) (Max) 4.0 m?? @ VGS = 4.5 V
Total Gate Charge (Qg) 35 nC
Operating Temperature Range -55 ??C to +150 ??C
Package Type Power SO-8
Power Dissipation (PD) 90 W

A5G35S004NT6 Key Features

  • Low RDS(on) Resistance: Minimizes conduction losses, improving efficiency in high-current power applications.
  • High Continuous Drain Current Capability: Supports up to 35 A, enabling robust performance in demanding load conditions.
  • Compact Power SO-8 Package: Allows for space-saving PCB designs without sacrificing thermal dissipation.
  • Wide Operating Temperature Range: Ensures reliable operation in harsh industrial and automotive environments.
  • Optimized Gate Charge: Facilitates fast switching speeds, reducing switching losses and improving overall system efficiency.

A5G35S004NT6 Advantages vs Typical Alternatives

This device offers superior efficiency with its low on-resistance and optimized gate charge compared to typical MOSFETs in the same voltage class. Its high continuous drain current rating ensures reliable performance under heavy load, while the compact package enhances integration flexibility. These factors collectively improve system power density and thermal management, making it advantageous for designers prioritizing performance and reliability.

Typical Applications

  • DC-DC converters for industrial power supplies, where efficient switching and thermal reliability are essential for long-term operation.
  • Motor control circuits requiring high current handling and fast switching speeds to optimize torque and responsiveness.
  • Battery management systems, benefiting from low conduction losses and wide temperature tolerance for enhanced safety and lifespan.
  • Load switch applications in automotive electronics, supporting robust and reliable power delivery under harsh conditions.

A5G35S004NT6 Brand Info

The A5G35S004NT6 is produced by a leading semiconductor manufacturer known for delivering reliable and high-performance power devices. This product line is recognized for its rigorous quality standards, extensive technical support, and global availability. Designed to meet stringent industrial and automotive requirements, the device reflects the brand??s commitment to innovation and excellence in power management solutions.

FAQ

What is the maximum drain-source voltage rating for this device?

The maximum drain-source voltage (VDS) is rated at 30 V, making it suitable for low-voltage power management applications. This ensures safe operation within this voltage limit without risk of breakdown.

How does the low RDS(on) benefit circuit performance?

A low on-resistance reduces conduction losses during operation, which improves overall system efficiency by minimizing heat generation. This is particularly important in high-current applications where power dissipation directly impacts reliability and thermal management.

Is the device suitable for automotive environments?

Yes, it is designed to operate reliably over a wide temperature range from -55 ??C to +150 ??C, complying with the demanding conditions typically found in automotive and industrial settings.

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产品中间询盘

What package type is used and why is it important?

The device uses a Power SO-8 package, which offers a balance of compact size and effective thermal dissipation. This is crucial for saving board space while managing heat in power applications.

Can this device handle high switching frequencies?

Yes, the optimized total gate charge of 35 nC enables fast switching speeds, reducing switching losses and making it suitable for applications requiring high-frequency operation.

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