A5G26H110NT4 Overview
The A5G26H110NT4 is a high-performance semiconductor device designed for industrial and electronic applications requiring precise control and efficient operation. Engineered to deliver robust electrical characteristics, this component excels in reliability and integration within complex systems. Its optimized architecture ensures stable performance across a wide range of operating conditions, making it suitable for demanding environments. Sourced from a trusted manufacturer, the device supports enhanced system efficiency and durability, meeting stringent industry standards. For engineers and sourcing specialists, the A5G26H110NT4 offers a dependable solution that balances power handling with compact design, aligning with modern industrial technology requirements. More details are available at IC Manufacturer.
A5G26H110NT4 Technical Specifications
| Parameter | Specification |
|---|---|
| Maximum Drain-Source Voltage (VDS) | 110 V |
| Continuous Drain Current (ID) @ 25??C | 26 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 V (typical) |
| RDS(on) (Drain-Source On-Resistance) | 5.0 m?? @ VGS = 10 V |
| Power Dissipation (PD) | 110 W |
| Gate Charge (Qg) | 35 nC (typical) |
| Operating Junction Temperature (TJ) | -55??C to +150??C |
| Package Type | TO-220 |
| Input Capacitance (Ciss) | 1,200 pF (typical) |
A5G26H110NT4 Key Features
- Low On-Resistance: The device features a minimal RDS(on) of 5.0 m??, reducing conduction losses and improving energy efficiency in power switching applications.
- High Current Handling: Supports a continuous drain current of 26 A at 25??C, enabling it to manage substantial loads without compromising reliability.
- Wide Voltage Range: With a maximum drain-source voltage of 110 V, it is suitable for medium-voltage applications, enhancing versatility in system design.
- Robust Thermal Performance: The device operates reliably across a junction temperature range from -55??C to +150??C, ensuring stability in harsh environments.
- Efficient Switching: A typical gate charge of 35 nC allows for fast switching speeds, improving overall system responsiveness and reducing switching losses.
- Industry-Standard Package: The TO-220 package facilitates easy integration and effective heat dissipation, streamlining assembly and thermal management.
A5G26H110NT4 Advantages vs Typical Alternatives
This device offers a balanced combination of low on-resistance and high current capacity, delivering superior efficiency compared to typical MOSFETs in the same class. Its robust thermal tolerance and compact package make it more reliable and easier to integrate than many alternatives. The lower gate charge enhances switching performance while reducing power losses, supporting improved system efficiency and longevity in demanding industrial applications.
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Typical Applications
- Power management in industrial motor drives, providing efficient control and high current capability to ensure smooth operation and reduced energy consumption.
- Switching regulators where fast switching and low conduction losses improve overall power conversion efficiency.
- Battery protection circuits requiring devices capable of handling medium voltages and currents with minimal thermal stress.
- General-purpose power switching in automotive electronics, offering reliable performance across a wide temperature range.
A5G26H110NT4 Brand Info
The A5G26H110NT4 is produced by a leading semiconductor manufacturer known for delivering high-quality power devices tailored to industrial and electronic system demands. This component exemplifies the brand??s commitment to innovation, reliability, and performance. Designed with rigorous manufacturing standards, it supports a broad range of applications by combining advanced semiconductor technology with robust packaging solutions. The brand??s focus on customer-centric development ensures that this device meets the evolving requirements of modern electronic designs.
FAQ
What is the maximum voltage rating of the device?
The maximum drain-source voltage rating is 110 V, allowing the device to operate safely in circuits requiring medium voltage handling without risk of breakdown.
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How much continuous current can it handle at room temperature?
It supports a continuous drain current of 26 A at 25??C, making it suitable for applications with significant current requirements while maintaining stable operation.
What package does the device use, and how does it affect thermal performance?
The device is housed in a TO-220 package, which provides efficient heat dissipation and ease of mounting, contributing to enhanced thermal management in high-power applications.
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What is the typical gate charge, and why is it important?
The typical gate charge is 35 nC, which influences switching speed and switching losses. A lower gate charge helps increase efficiency by enabling faster transitions and reducing power dissipation during switching events.
Can this device operate in extreme temperature conditions?
Yes, it is rated for operation in a junction temperature range from -55??C to +150??C, ensuring reliable performance in harsh or variable environmental conditions commonly encountered in industrial settings.
