A2I35H060NR1 Overview
The A2I35H060NR1 is a high-performance power MOSFET designed for demanding industrial and automotive applications. It features a low on-resistance and fast switching capabilities that enable efficient power conversion and minimized energy loss. This device supports high voltage operation up to 600 V and is optimized for robustness and reliability under harsh conditions. With excellent thermal performance and rugged design, it is suitable for use in power management, motor control, and inverter circuits. The product is offered by IC Manufacturer, ensuring industry-grade quality and supply chain support.
A2I35H060NR1 Technical Specifications
| Parameter | Specification |
|---|---|
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25??C | 35 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| Drain-Source On-Resistance (RDS(on)) | 35 m?? (typical at VGS = 10 V) |
| Total Gate Charge (Qg) | 65 nC |
| Input Capacitance (Ciss) | 680 pF |
| Power Dissipation (PD) | 150 W |
| Operating Junction Temperature (TJ) | -55??C to 175??C |
A2I35H060NR1 Key Features
- High Voltage Tolerance: Supports up to 600 V drain-source voltage, enabling use in high-voltage power electronics applications.
- Low On-Resistance: Typical RDS(on) of 35 m?? reduces conduction losses, improving system efficiency and thermal management.
- Fast Switching Performance: Optimized gate charge and input capacitance contribute to rapid switching, reducing switching losses in PWM and inverter circuits.
- Robust Thermal Capability: Power dissipation rating of 150 W and wide junction temperature range ensure reliable operation under demanding thermal conditions.
A2I35H060NR1 Advantages vs Typical Alternatives
This device offers a compelling balance of low on-resistance and high voltage rating, outperforming many alternatives in power efficiency and thermal stability. Its moderate gate charge enables faster switching speeds, reducing overall energy loss in high-frequency applications. The wide operating temperature range and robust power dissipation rating provide increased reliability and durability, making it well-suited for industrial-grade and automotive environments.
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Typical Applications
- Industrial motor drives: Ideal for efficient motor control due to its high voltage rating and low conduction losses, improving system reliability and performance in industrial automation.
- Power inverters: Suitable for use in DC-AC conversion systems where fast switching and high voltage handling are critical.
- Switch-mode power supplies: Enhances energy efficiency in power conversion circuits by minimizing losses during switching and conduction.
- Electric vehicle powertrain: Supports robust operation in battery management and traction inverter circuits requiring high current and voltage ratings.
A2I35H060NR1 Brand Info
The A2I35H060NR1 is part of a series of premium power MOSFETs produced by a leading semiconductor manufacturer. This product line focuses on delivering high voltage and current capabilities with superior switching performance. The brand emphasizes stringent quality control and innovation to meet the rigorous demands of industrial and automotive power electronics sectors. With comprehensive technical support and global distribution, this MOSFET is positioned to help engineers optimize their power management designs with confidence.
FAQ
What is the maximum drain-source voltage rating of this MOSFET?
This MOSFET supports a maximum drain-source voltage of 600 V, which makes it suitable for high-voltage applications such as industrial motor drives and power inverters.
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How does the on-resistance affect the device performance?
The on-resistance, typically 35 m?? at a gate voltage of 10 V, directly influences conduction losses during operation. Lower on-resistance results in reduced power dissipation and improved efficiency, especially important in high current applications.
What are the thermal characteristics of this power MOSFET?
It has a power dissipation rating of 150 W and operates reliably within a junction temperature range from -55??C up to 175??C, supporting stable performance under demanding thermal conditions often found in industrial environments.
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Is this MOSFET suitable for high-frequency switching applications?
Yes, with a total gate charge of 65 nC and input capacitance of 680 pF, the device is optimized for fast switching, which helps reduce switching losses in PWM and inverter circuits operating at higher frequencies.
Can this MOSFET be used in automotive applications?
The robust voltage rating, low on-resistance, and wide operating temperature range make this MOSFET appropriate for automotive powertrain and battery management systems, where reliability and efficiency are critical.
