2N930A-Transistor NPN Small Signal Amplifier in TO-18 Metal Can Package by ON Semiconductor

2N930A-Transistor Overview

The 2N930A transistor is a high-performance NPN bipolar junction transistor designed for low-power amplification and switching applications. Featuring a maximum collector current of 100mA and a transition frequency (fT) of 250MHz, it offers excellent high-frequency response suitable for RF and audio circuits. Its robust voltage ratings and moderate gain characteristics make it reliable for signal processing tasks in industrial and communication equipment. Available in a TO-18 metal can package, the device ensures good thermal dissipation and mechanical stability. For sourcing and detailed technical support, visit IC Manufacturer.

2N930A-Transistor Technical Specifications

2N930A-Transistor Key Features

• High Transition Frequency: With an fT of 250 MHz, it enables efficient operation in RF amplification and switching circuits, ensuring signal integrity at high frequencies.
• Moderate Gain Range: The gain (hFE) between 40 and 140 provides design flexibility for amplification stages requiring stable and predictable gain.
• Robust Voltage Ratings: Collector-emitter voltage rating of 30 V suits moderate voltage applications, improving device reliability under extended operating conditions.
• Durable TO-18 Package: Metal can packaging enhances thermal management and mechanical robustness, supporting reliable long-term usage in industrial environments.

Typical Applications

• RF Amplification: Ideal for low-power RF signal amplification in communication devices due to its high transition frequency and stable gain characteristics.
• Audio Signal Processing: Used in audio preamplifier stages requiring low noise and moderate gain performance.
• Switching Circuits: Suitable for general-purpose switching applications in control and logic circuits with moderate voltage and current levels.
• Instrumentation Equipment: Employed in precision measurement devices where reliability and consistent transistor parameters are essential.

2N930A-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of high-frequency performance and moderate power handling, making it advantageous over typical low-frequency or general-purpose transistors. Its superior transition frequency and reliable gain range enable more accurate signal amplification and switching in demanding RF and analog circuits. The TO-18 metal can package further enhances thermal dissipation and mechanical stability compared to plastic-encapsulated alternatives, ensuring higher reliability in industrial applications.

2N930A-Transistor Brand Info

The 2N930A transistor is a classic semiconductor device originally introduced by major manufacturers such as Motorola and Texas Instruments, known for their pioneering work in discrete transistor production. This device remains widely produced by various IC manufacturers adhering to JEDEC standards for transistor specifications. Its enduring presence in the market is due to its reliable electrical characteristics and robust packaging, making it a trusted component in legacy and ongoing industrial designs.

FAQ

What is the maximum collector current rating of the 2N930A transistor?

The maximum collector current (Ic) for this transistor is rated at 100 mA. This rating defines the upper limit of current the transistor can safely conduct through its collector terminal without damage under specified conditions.

Can the 2N930A be used in high-frequency applications?

Yes, the transistor features a transition frequency (fT) of 250 MHz, making it suitable for low-power RF amplification and other high-frequency signal processing applications, such as communication circuits.

What package type is the 2N930A transistor available in?

This device is housed in a TO-18 metal can package, which offers enhanced thermal conductivity and mechanical protection, beneficial for industrial and high