2N7369-Transistor Overview
The 2N7369 transistor is a silicon NPN epitaxial planar transistor designed primarily for low noise and high gain amplification applications. It offers reliable switching and amplification performance, making it suitable for use in audio frequency stages, low-level signal amplification, and general-purpose switching circuits. This transistor features a moderate power dissipation and collector current rating, which ensures stable operation in a variety of industrial and commercial electronic designs. Engineers and sourcing specialists appreciate its well-documented electrical characteristics and consistent manufacturing quality. For more detailed sourcing information, visit the IC Manufacturer website.
2N7369-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Silicon Epitaxial Planar |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 150 mA |
| Power Dissipation (Ptot) | 500 mW |
| Gain Bandwidth Product (fT) | 80 MHz |
| DC Current Gain (hFE) | 40 to 300 (depending on collector current) |
| Noise Figure | Low noise operation suitable for audio frequency stages |
2N7369-Transistor Key Features
- Low noise performance: Provides clear signal amplification with minimal distortion, ideal for audio and low-level signal applications.
- Wide voltage ratings: Supports collector-emitter voltages up to 80 V, allowing flexibility in various circuit designs.
- High gain range: Offers a DC current gain range from 40 to 300, ensuring amplification versatility across different operating points.
- Reliable planar epitaxial construction: Enhances thermal stability and long-term reliability in industrial environments.
Typical Applications
- Low-level audio frequency amplifier stages where minimal noise and consistent gain are critical for signal integrity.
- Switching circuits in industrial control systems requiring moderate collector current handling and voltage tolerance.
- Signal amplification in instrumentation and measurement devices where precision and low distortion are essential.
- Driver stages for relays or other semiconductor devices needing reliable transistor switching behavior.
2N7369-Transistor Advantages vs Typical Alternatives
This transistor offers a combination of low noise and moderate power handling that sets it apart from typical general-purpose transistors. Its epitaxial planar design ensures enhanced gain stability and thermal performance, which improves reliability in sensitive amplification tasks. Compared to alternatives with lower voltage ratings or higher noise figures, this device provides engineers with dependable operation for audio and low-level signal processing applications.
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2N7369-Transistor Brand Info
The 2N7369 transistor is part of a legacy series produced and specified by multiple semiconductor manufacturers adhering to JEDEC standards. It is recognized primarily as a product from Fairchild Semiconductor and other established vendors specializing in discrete transistor components. Its consistent quality and availability have made it a trusted component for decades in industrial and commercial electronic circuits. The transistor is often found in inventory from major distributors supporting legacy and repair applications.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current rating is 150 mA, which makes it suitable for moderate power amplification and switching applications without risking device damage under normal operating conditions.
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Is the transistor suitable for high-frequency applications?
With a gain bandwidth product of approximately 80 MHz, it supports moderate frequency applications, including audio frequency amplification and some RF stages, but it is not intended for very high-frequency or microwave use.
Can this transistor be used in low-noise amplifier circuits?
Yes, the 2N7369 is designed with low noise characteristics, making it well suited for low-level audio frequency amplification and other applications where signal clarity is important.
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What is the typical power dissipation for this device?
The transistor






