2N7008-G N-Channel MOSFET Transistor, Low Voltage Switch, SOT-23 Package

  • This transistor switches electronic signals efficiently, enabling precise control in various circuits.
  • Its voltage rating supports stable operation under typical load conditions, ensuring consistent performance.
  • The compact package reduces board space, aiding in the design of smaller, more integrated devices.
  • Used in low-power switching applications, it enhances energy efficiency and prolongs device battery life.
  • Manufactured to meet standard quality tests, it offers reliable long-term operation in diverse environments.
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产品上方询盘

2N7008-G Overview

The 2N7008-G is an N-channel enhancement mode field-effect transistor (FET) designed for low-voltage switching and amplification applications. It offers a compact surface-mount package optimized for automated assembly, ensuring efficient integration in modern electronic circuits. This device supports fast switching speeds with low gate charge, making it ideal for power management and signal switching in industrial control, consumer electronics, and communication systems. With robust electrical characteristics and reliable performance under varying thermal conditions, the 2N7008-G delivers excellent durability and efficiency. For more detailed product information, visit IC Manufacturer.

2N7008-G Technical Specifications

Parameter Specification Unit
Drain-Source Voltage (VDS) 30 V
Gate-Source Voltage (VGS) ??20 V
Continuous Drain Current (ID) 115 mA
Power Dissipation (PD) 300 mW
Gate Threshold Voltage (VGS(th)) 0.8 ?C 2.0 V
Drain-Source On-Resistance (RDS(on)) 8.5 ?? (max at VGS= 4.5V)
Input Capacitance (Ciss) 15 pF
Operating Temperature Range -55 to +150 ??C

2N7008-G Key Features

  • Low On-Resistance: Minimizes conduction losses, improving overall circuit efficiency and reducing heat generation during switching operations.
  • Wide Operating Voltage Range: Supports up to 30 V drain-source voltage, enabling use in a broad array of low-voltage power switching applications.
  • Surface-Mount Package: Compact footprint ideal for automated PCB assembly, saving board space and enhancing manufacturing efficiency.
  • High Switching Speed: Enables rapid response times suitable for signal amplification and fast switching circuits.
  • Robust Thermal Performance: Rated for operation up to 150 ??C, ensuring reliability in demanding industrial environments.

2N7008-G Advantages vs Typical Alternatives

This device offers superior low-voltage switching performance with a low gate threshold and minimal on-resistance compared to typical enhancement mode MOSFETs. Its surface-mount packaging enhances integration in compact designs, while the stable thermal characteristics improve reliability under high operating temperatures. These factors combine to deliver greater efficiency and durability, making it an excellent choice for applications requiring precise and dependable switching behavior.

Typical Applications

  • Switching and amplification in low-voltage power management circuits, where efficient control of current flow and minimal losses are critical for system performance.
  • Load switching in battery-powered devices, benefiting from low gate threshold voltage and compact packaging.
  • Signal level shifting and digital logic interfacing, leveraging fast switching capability and low input capacitance.
  • Consumer electronics, including portable communication devices, where space-saving surface-mount components and reliable operation are essential.

2N7008-G Brand Info

The 2N7008-G is produced by a leading semiconductor manufacturer known for delivering high-quality MOSFETs tailored to industrial and consumer electronics markets. This product line emphasizes reliability, performance, and ease of integration, supporting modern electronics design requirements. The device??s adherence to stringent quality standards ensures consistent electrical characteristics and long-term operational stability, making it a trusted choice among engineers and sourcing specialists.

FAQ

What is the maximum drain-source voltage rating for this transistor?

The maximum drain-source voltage is 30 volts. This rating indicates the highest voltage the device can withstand between the drain and source terminals without damage, making it suitable for low-voltage switching applications.

Can this transistor operate at high temperatures?

Yes, it supports an operating temperature range from -55 ??C up to +150 ??C. This wide range allows it to function reliably in harsh environments, including industrial and automotive applications.

How does the low gate threshold voltage benefit circuit design?

A low gate threshold voltage, ranging from 0.8 to 2.0 volts, means the transistor can switch on with minimal gate drive voltage. This improves compatibility with low-voltage control signals and reduces power consumption in the driving circuitry.

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产品中间询盘

Is the device suitable for automated PCB assembly?

Absolutely. Its surface-mount package is designed for high-volume automated assembly processes, enabling efficient manufacturing while saving PCB real estate compared to through-hole components.

What kind of applications typically use this transistor?

It is commonly used for switching and amplification in power management circuits, load switching in battery-operated devices, signal level shifting, and in various consumer electronics where compact size and reliable switching are required.

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