2N7002-G N-Channel MOSFET Transistor, Low Power Switch, SOT-23 Package

  • This transistor acts as a switch or amplifier, enabling precise control of electronic signals and currents.
  • It offers low gate threshold voltage, ensuring efficient switching and reduced power consumption in circuits.
  • Its compact package reduces board space, making it suitable for densely packed or portable electronic devices.
  • 2N7002-G is ideal for interfacing low-voltage logic to higher power loads in embedded system designs.
  • Designed for consistent performance, it maintains stable operation under typical environmental and electrical stresses.
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2N7002-G Overview

The 2N7002-G is a high-performance N-channel enhancement mode MOSFET designed for efficient switching and amplification in low-voltage applications. Its robust construction and reliable electrical characteristics make it a versatile choice for industrial and consumer electronics. Offering low gate charge and fast switching speeds, this device enables improved power efficiency and thermal management. The 2N7002-G is well-suited for use in power management circuits, level shifting, and load switching. For sourcing and technical details, visit IC Manufacturer.

2N7002-G Technical Specifications

Parameter Specification
Device Type N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) 60 V
Gate-Source Voltage (VGS) ??20 V
Continuous Drain Current (ID) 115 mA
Power Dissipation (PD) 300 mW
Maximum Gate Threshold Voltage (VGS(th)) 3 V
Drain-Source On-Resistance (RDS(on)) 5 ?? at VGS = 10 V
Operating Temperature Range -55??C to +150??C
Package Style SOT-23

2N7002-G Key Features

  • Low Gate Charge: Enables faster switching speeds, reducing power loss and improving efficiency in switching circuits.
  • High Drain-Source Voltage Rating: Supports up to 60 V, allowing operation in a wide range of voltage environments.
  • Compact SOT-23 Package: Facilitates easy PCB integration and supports high-density circuit designs.
  • Wide Operating Temperature: Reliable performance over -55??C to +150??C ensures suitability for harsh industrial environments.
  • Low On-Resistance: Minimizes conduction losses, enhancing energy efficiency in power management applications.
  • Robust Electrical Characteristics: Stable threshold voltage and current ratings contribute to predictable circuit behavior.

2N7002-G Advantages vs Typical Alternatives

This device offers a compelling balance of low on-resistance and high voltage tolerance compared to typical MOSFETs in the same category. Its low gate charge and compact footprint make it ideal for efficient, space-constrained designs. Additionally, the wide operating temperature range improves reliability in demanding industrial settings, providing an edge over alternatives with narrower temperature specifications.

Typical Applications

  • Load switching circuits in battery-powered devices, enabling efficient power control with minimal losses and heat generation.
  • Level shifting in interface circuits, allowing seamless integration between different voltage domains.
  • General-purpose switching applications where compact size and reliable performance are critical.
  • Low-voltage power management and signal amplification in consumer electronics and industrial control systems.

2N7002-G Brand Info

The 2N7002-G is a widely recognized MOSFET from a reputable semiconductor manufacturer known for delivering high-quality discrete components. This product is designed to meet stringent industrial standards, ensuring consistent electrical performance and durability. Its adoption across various sectors reflects the brand??s commitment to providing reliable, cost-effective solutions for switching and amplification needs.

FAQ

What is the maximum voltage rating for this MOSFET?

The maximum drain-to-source voltage rating is 60 volts, making it suitable for low to medium voltage applications. This rating ensures safe operation within typical industrial and consumer electronics environments without risk of breakdown.

How does the package type affect integration in circuit design?

The device is housed in a compact SOT-23 package, which is ideal for high-density PCB layouts. This small footprint allows designers to save board space while maintaining reliable thermal and electrical performance.

What is the significance of the low gate charge in this MOSFET?

Low gate charge means the device requires less input energy to switch on and off. This leads to faster switching speeds and reduced switching losses, which improves overall power efficiency, particularly in high-frequency applications.

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Can this MOSFET operate in extreme temperature environments?

Yes, it supports a wide operating temperature range from -55??C to +150??C, making it suitable for use in harsh industrial conditions and automotive applications where temperature extremes are common.

What typical applications benefit most from using this MOSFET?

Common uses include load switching, level shifting, and low-voltage power management circuits. Its reliable switching characteristics and compact size make it ideal for portable electronics, industrial controls, and interface circuits.

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