2N6678-Transistor Overview
The 2N6678 transistor is a high-performance NPN bipolar junction transistor designed for switching and amplification in industrial and commercial electronics. Featuring a robust maximum collector current and voltage rating, it ensures reliable operation under demanding conditions. Its medium power dissipation capabilities make it suitable for a wide range of applications including signal processing, power regulation, and driver stages. This transistor’s stable gain characteristics and efficient switching behavior enhance circuit performance, providing engineers with a dependable component for precise control. For detailed sourcing and additional product information, visit IC Manufacturer.
2N6678-Transistor Key Features
- High Collector Current Handling: Supports up to 10A, enabling use in medium power applications requiring robust current control.
- Collector-Emitter Voltage: Rated at 60V, allowing for effective operation in circuits with moderate voltage levels.
- Low Saturation Voltage: Ensures efficient switching with reduced power loss, enhancing overall energy efficiency.
- Reliable Gain Performance: Consistent DC current gain (hFE) range supports stable amplification across various operating conditions.
2N6678-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 80 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 10 | A |
| Power Dissipation (Ptot) | 80 | W |
| DC Current Gain (hFE) | 40 to 160 | ?? |
| Transition Frequency (fT) | ?? 3 | MHz |
| Package Type | TO-3 | ?? |
2N6678-Transistor Advantages vs Typical Alternatives
This transistor offers a superior combination of high current handling and voltage tolerance compared to typical small-signal transistors. Its low saturation voltage reduces power dissipation, contributing to improved energy efficiency in switching applications. The TO-3 package provides enhanced thermal management, increasing reliability under continuous load. These advantages make it an ideal choice for applications requiring robust performance and durability, outperforming many alternatives in industrial settings.
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Typical Applications
- Power switching and amplification circuits in industrial automation, where high current and voltage ratings ensure dependable control and signal integrity.
- Driver stages for relay and motor control systems requiring efficient and stable transistor operation.
- Audio amplifier output stages benefiting from consistent gain and power dissipation capabilities.
- General-purpose medium power amplification in communication and instrumentation devices.
2N6678-Transistor Brand Info
The 2N6678 transistor is a well-established semiconductor device manufactured under strict quality standards to ensure consistent electrical performance and reliability. Packaged in a TO-3 metal can, it supports effective heat dissipation, making it suitable for industrial-grade applications. This transistor is widely recognized for its robustness and versatility, favored by engineers for both design flexibility and dependable operation in demanding environments.
FAQ
What is the maximum collector current rating of this transistor?
The maximum continuous collector current is 10 amperes, allowing the transistor to handle medium power loads effectively in both switching and amplification roles.
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What voltage limits should be observed to prevent damage?
The device supports a maximum collector-emitter voltage of 60 volts and a collector-base voltage of 80 volts. Exceeding these ratings risks damaging the transistor and compromising circuit reliability.
How does the TO-3 package benefit the transistor??s performance?
The TO-3 metal can package offers superior thermal conductivity, enabling efficient heat dissipation during operation. This enhances the transistor’s reliability and allows it to function safely at higher power levels.
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What is the typical DC current gain range for this transistor?
The DC current gain (hFE) typically ranges from 40 to 160, ensuring stable amplification performance across various operating conditions and circuit configurations.
Is this transistor suitable for high-frequency applications?
With a transition frequency of at least 3 MHz, it can be used in moderate-frequency amplifier and switching applications, though it is not optimized for very high-frequency circuits.
