2N6676T1-Transistor Overview
The 2N6676T1 is a high-performance NPN bipolar junction transistor designed for medium power switching and amplification applications. With its robust voltage and current ratings, this transistor excels in industrial and consumer electronic circuits where reliable switching and amplification are critical. It offers stable operation across a wide range of temperatures, ensuring dependable performance in demanding environments. The transistor??s TO-220 package facilitates efficient heat dissipation, making it suitable for power management roles. Engineers and sourcing specialists can trust this device for its proven reliability and consistent electrical characteristics, as detailed by IC Manufacturer.
2N6676T1-Transistor Key Features
- High collector current rating: Supports up to 10A, enabling robust switching capabilities in power-intensive circuits.
- Collector-emitter voltage: Rated up to 80V, providing flexibility for various medium voltage applications.
- TO-220 package: Ensures excellent thermal management and easy PCB mounting, improving system reliability.
- Gain bandwidth product: Moderate gain-bandwidth suitable for general-purpose amplification and switching.
2N6676T1-Transistor Technical Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | V_CEO | 80 | V |
| Collector-Base Voltage | V_CBO | 100 | V |
| Emitter-Base Voltage | V_EBO | 5 | V |
| Collector Current (Continuous) | I_C | 10 | A |
| Power Dissipation | P_D | 80 | W |
| DC Current Gain (h_FE) | h_FE | 40-160 | ?? |
| Transition Frequency | f_T | 10 | MHz |
| Operating Junction Temperature | T_j | 150 | ??C |
2N6676T1-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of high current capacity and voltage tolerance, outperforming many standard NPN transistors in medium power applications. Its TO-220 package enhances heat dissipation, improving reliability under thermal stress compared to smaller form-factor devices. The device??s wide gain range provides design flexibility, making it a preferred choice for engineers seeking dependable switching and amplification with proven stability in industrial settings.
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Typical Applications
- Power switching circuits in industrial automation, where reliable control of motors and relays is essential for system performance.
- Audio frequency amplification for medium power stages, providing clean signal gain with stable operation.
- Voltage regulation and power supply circuits requiring medium voltage and current handling capabilities.
- General-purpose switching in consumer electronics, enabling efficient control of loads and interface circuits.
2N6676T1-Transistor Brand Info
The 2N6676T1 transistor is a well-established product within the semiconductor portfolio of IC Manufacturer. Known for consistent quality and adherence to stringent manufacturing standards, this transistor supports a wide range of industrial and commercial applications. It is backed by comprehensive datasheets and application support, ensuring engineers have the necessary information to integrate it seamlessly into their designs.
FAQ
What are the maximum voltage ratings for this transistor?
The transistor supports a maximum collector-emitter voltage (V_CEO) of 80V and a collector-base voltage (V_CBO) of 100V. This allows it to operate safely in medium voltage circuits without risk of breakdown under normal conditions.
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What is the typical current rating for continuous operation?
The device can handle a continuous collector current of up to 10 amperes, making it suitable for medium power switching and amplification tasks in various electronic systems.
How does the TO-220 package benefit thermal management?
The TO-220 package offers a metal tab for efficient heat dissipation, which helps maintain lower junction temperatures during high current operation. This enhances device reliability and longevity in demanding applications.
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What gain characteristics can be expected from this transistor?
The DC current gain (h_FE) ranges between 40 and 160, depending on operating conditions. This gain range provides flexibility for both switching and amplification in typical circuit designs.
Is this transistor suitable for high-frequency applications?
With a transition frequency (f_T) of approximately 10 MHz, this transistor is suitable for medium frequency applications but may not be ideal for very high-frequency RF circuits. It fits well within typical audio and control signal frequency ranges.
