2N6676-Transistor NPN Power Amplifier – ON Semiconductor, TO-126 Package

2N6676-Transistor Overview

The 2N6676 is a silicon NPN bipolar junction transistor designed for medium power amplification and switching applications. Engineered to handle collector currents up to 10A and voltages reaching 100V, it offers robust performance in both linear and switching modes. The device features a high gain bandwidth product, ensuring efficient signal amplification with minimal distortion. Its TO-3 metal can package aids in effective thermal management, enhancing reliability and longevity. Suitable for industrial and commercial environments, this transistor is a versatile choice for engineers seeking dependable performance in power control circuits and amplifier designs. More details are available at IC Manufacturer.

2N6676-Transistor Key Features

• High Collector Current Capacity: Supports up to 10A, enabling effective handling of medium power loads without compromising stability.
• Voltage Handling: Rated for a collector-emitter voltage of 100V, making it suitable for moderate voltage applications.
• Thermal Efficiency: Encapsulated in a TO-3 metal can package, it ensures superior heat dissipation for enhanced reliability under continuous operation.
• Gain Bandwidth Product: Provides adequate gain at higher frequencies, allowing for efficient amplification in RF and audio circuits.

2N6676-Transistor Technical Specifications

2N6676-Transistor Advantages vs Typical Alternatives

This transistor offers a robust combination of high current and voltage ratings with a durable TO-3 package that enhances thermal dissipation compared to typical plastic-encapsulated devices. Its moderate gain bandwidth and reliable power handling make it a preferred option for applications requiring stable switching and amplification under demanding thermal conditions. The broad operating temperature range and consistent gain performance provide dependable operation in industrial environments where alternative devices may face thermal or electrical limitations.

Typical Applications

• Power Amplifiers: Ideal for medium power linear amplification in audio and RF systems, supporting signal integrity and efficient power delivery over extended periods.
• Switching Regulators: Utilized in power supply regulation circuits where high current switching is required with minimal losses.
• Motor Control Circuits: Suitable for driving DC motors in industrial automation due to its ability to handle significant loads and voltage.
• General Purpose Switching: Employed in various electronic switching applications requiring durable and reliable transistor performance under continuous operation.

2N6676-Transistor Brand Info

The 2N6676 transistor is a well-established product widely recognized in the semiconductor industry for its reliability and robust performance. Manufactured under stringent quality standards, this device is designed to meet the demands of industrial and commercial applications. Its consistent electrical characteristics and durable packaging reflect the brand??s commitment to delivering components that support long-term system stability and operational efficiency.

FAQ

What package type does the 2N6676 transistor use?

The transistor is housed in a TO-3 metal can package, which offers excellent heat dissipation and mechanical durability. This packaging type is particularly advantageous in power applications where thermal management is critical.

What is the maximum collector current the device can handle?

The 2N6676 supports a maximum continuous collector current of 10 amperes, allowing it to drive medium power loads effectively without risking damage due to current overload.

Can this transistor be used in high-frequency applications?

With a gain bandwidth product around 5 MHz, the transistor is suitable for moderate frequency amplification and switching tasks, such as audio and low RF frequency circuits, but may not be optimal for very high-frequency applications.

What is the maximum power dissipation rating for this transistor?

The device features a maximum power dissipation of 75 watts when properly mounted, enabling it to handle significant power levels in industrial circuits without overheating.

What temperature range can the 2N6676 operate within?

The transistor is rated to operate reliably from -65??C up to +200??C junction temperature, making it suitable for harsh environments and industrial settings where temperature extremes are common.