2N6352P-Darlington-PIND Overview
The 2N6352P-Darlington-PIND is a high-gain Darlington phototransistor designed for precise optical sensing applications. Featuring an integrated photodiode and transistor pair in a single package, it enables efficient light-to-current conversion with enhanced sensitivity. This device is optimized for low-light detection, making it suitable for industrial automation, position sensing, and optical communication systems. Its rugged construction supports reliable performance in harsh environments. Engineers and sourcing specialists benefit from its consistent electrical characteristics and ease of integration into existing systems. For further details and sourcing options, visit IC Manufacturer.
2N6352P-Darlington-PIND Key Features
- Integrated Darlington transistor configuration: Provides high current gain, improving signal amplification for precise photodetection.
- Photodiode input: Enables direct light sensing with fast response times, critical for dynamic optical sensing applications.
- High sensitivity to visible and near-infrared light: Ensures accurate detection over a broad spectral range, enhancing versatility.
- Robust package design: Supports stable operation in industrial environments, increasing device reliability and lifespan.
2N6352P-Darlington-PIND Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 30 | V |
| Emitter-Collector Voltage (VECO) | 7 | V |
| Collector Current (IC) | 100 | mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.5 | V |
| Current Gain (hFE) | 10,000 | (typical) |
| Rise Time (tr) | 2 | ??s |
| Fall Time (tf) | 2 | ??s |
| Operating Temperature Range | -55 to +100 | ??C |
2N6352P-Darlington-PIND Advantages vs Typical Alternatives
This phototransistor’s integrated Darlington pair architecture delivers significantly higher current gain and sensitivity compared to standard phototransistors. Its low saturation voltage and fast switching times improve efficiency and responsiveness in optical sensing circuits. The robust package enhances reliability under industrial conditions, offering a distinct advantage over discrete photodiode-transistor combinations by simplifying design and reducing component count.
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Typical Applications
- Optical position sensing in automated machinery where precise light detection and amplification are critical for system accuracy and responsiveness.
- Light detection in safety interlock systems, providing reliable operation in varying ambient light conditions.
- Optoelectronic communication devices requiring fast and sensitive photodetection to maintain signal integrity.
- Industrial instrumentation for non-contact optical measurement and monitoring tasks.
2N6352P-Darlington-PIND Brand Info
The 2N6352P-Darlington-PIND is offered by reputable semiconductor manufacturers known for high-quality optoelectronic components. This product line emphasizes robust performance, consistency, and ease of integration into demanding industrial and commercial applications. Designed to meet stringent electrical and mechanical standards, it reflects a commitment to reliability and long-term operational stability in phototransistor technology.
FAQ
What type of light wavelengths does the 2N6352P-Darlington-PIND respond to most effectively?
The device exhibits high sensitivity primarily in the visible and near-infrared spectrum. This range allows it to detect common light sources used in optical sensing and communication, making it suitable for a variety of industrial and commercial environments.
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How does the Darlington configuration improve the performance of this phototransistor?
The Darlington pair provides a significant increase in current gain, allowing the phototransistor to amplify low-level photocurrents more effectively. This results in enhanced signal output, which simplifies subsequent signal processing and improves detection accuracy.
What are the typical operating temperature limits for this phototransistor?
The device is rated for reliable operation in temperatures ranging from -55??C to +100??C. This wide temperature range ensures functionality in both harsh and controlled environments common in industrial applications.
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Can the 2N6352P-Darlington-PIND be used in high-speed switching applications?
Yes, with rise and fall times around 2 microseconds, it supports relatively fast switching speeds suitable for many optical communication and sensing scenarios, balancing sensitivity with response time.
What packaging type does this phototransistor use, and how does it benefit the user?
The device is housed in a rugged, industry-standard package designed to protect the internal photodiode and transistor elements from mechanical and environmental stress, ensuring long-term reliability and ease of mounting on printed circuit boards.
