2N6318-Transistor NPN Power Transistor in TO-66 Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling effective control of current in various circuits.
  • Designed to handle medium power levels, it ensures stable performance under typical operating conditions.
  • Its package type contributes to a compact footprint, allowing efficient use of board space in device layouts.
  • Ideal for switching and amplification in audio or power supply circuits, improving overall device efficiency.
  • Manufactured to meet standard industry reliability guidelines, ensuring consistent operation over time.
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2N6318-Transistor Overview

The 2N6318 is a high-performance NPN bipolar junction transistor designed for medium-power amplification and switching applications. Featuring a robust collector current capability and moderate voltage ratings, this transistor excels in linear amplifier circuits and general-purpose switching tasks. Its reliable gain characteristics and thermal stability make it suitable for industrial and consumer electronics requiring consistent performance under varying loads. The device is available in a standard TO-39 metal can package, ensuring effective heat dissipation and durability. For detailed sourcing and technical support, visit IC Manufacturer.

2N6318-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 4 A
Power Dissipation (PD) 30 W
DC Current Gain (hFE) 40?C160 ??
Transition Frequency (fT) 10 MHz
Junction Temperature (TJ) 200 ??C

2N6318-Transistor Key Features

  • High Collector Current Capability: Supports up to 4A collector current, enabling robust switching and amplification in demanding circuits.
  • Moderate Voltage Ratings: With a maximum collector-emitter voltage of 60V, it suits medium-power applications without compromising device integrity.
  • Wide DC Current Gain Range: Gain values between 40 and 160 offer design flexibility for various amplification stages, optimizing performance and efficiency.
  • Metal Can Package (TO-39): Provides excellent thermal dissipation and mechanical stability, enhancing reliability in industrial environments.

Typical Applications

  • Linear amplifier stages in audio and signal processing circuits, where consistent gain and thermal stability are critical for sound fidelity and signal integrity.
  • Medium-power switching tasks in power regulation and relay driving, ensuring dependable on/off control in industrial automation systems.
  • General-purpose amplification in instrumentation and control circuitry, providing reliable signal boost with moderate voltage and current handling.
  • Complementary transistor pairs in push-pull amplifier configurations, enhancing efficiency and output power in electronic devices.

2N6318-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of collector current capacity and voltage tolerance, making it a reliable choice over typical low-power transistors. Its broad gain range allows engineers to tailor amplification precisely, enhancing circuit efficiency. The metal can TO-39 package ensures superior heat dissipation compared to plastic alternatives, improving operational reliability in demanding environments. These factors provide a distinct advantage in medium-power industrial and consumer electronics applications.

2N6318-Transistor Brand Info

The 2N6318 transistor is a widely recognized semiconductor device originally introduced by major manufacturers such as ON Semiconductor and Texas Instruments. Known for its robustness and consistent performance, it remains a preferred choice in industrial and commercial electronic designs. The device conforms to JEDEC standards, ensuring cross-manufacturer compatibility and quality assurance. Sourcing this transistor from authorized distributors guarantees compliance with industry reliability requirements.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current is rated at 4 amperes. This enables the device to handle medium-power switching and amplification tasks without risk of damage under specified operating conditions.

Can this transistor be used in high-frequency applications?

The transition frequency

Application

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