2N6301E3-Transistor NPN Power Amplifier Transistor in TO-3 Package by ON Semiconductor

2N6301E3-Transistor Overview

The 2N6301E3 is a robust NPN silicon power transistor designed for medium to high power switching and amplification applications. Engineered for reliable operation in industrial environments, it supports high voltage and current handling capabilities that make it suitable for demanding load conditions. With a sturdy TO-220 package, this transistor offers excellent thermal performance and ease of integration into power control circuits. Ideal for engineers and sourcing specialists seeking dependable discrete transistor solutions, the 2N6301E3 ensures consistent performance in power regulation and drive stages. For detailed sourcing and support, visit IC Manufacturer.

2N6301E3-Transistor Technical Specifications

2N6301E3-Transistor Key Features

• High voltage and current handling: Supports up to 100 V and 8 A, enabling reliable operation in power switching circuits.
• Robust power dissipation: Capable of dissipating 80 W, which ensures durability in high-load conditions and reduces the need for excessive cooling.
• Wide DC current gain range: Provides flexibility in circuit design by allowing operation over a broad range of gain values, enhancing amplification control.
• Thermally efficient TO-220 package: Facilitates heat dissipation and easy mounting on heatsinks, improving overall device reliability.

Typical Applications

• Power amplification in industrial motor control circuits, where consistent high current capability and voltage tolerance are critical for performance.
• Switching elements in power supply units, ensuring efficient load control and minimal signal distortion.
• Driver stages for relay and solenoid actuation, providing precise control with reliable switching speed.
• General-purpose power transistor applications in audio amplifiers and voltage regulators, where stability and durability are required.

2N6301E3-Transistor Advantages vs Typical Alternatives

The 2N6301E3 offers superior power handling and voltage tolerance compared to typical medium-power transistors, making it ideal for applications requiring sustained high load operation. Its broad current gain range allows for flexible circuit design, while the TO-220 package ensures thermal efficiency and easy integration. These advantages translate into enhanced reliability, reduced thermal stress, and longer component lifespan when compared to similar alternatives in the discrete transistor category.

2N6301E3-Transistor Brand Info

The 2N6301E3 transistor is widely manufactured by established semiconductor companies specializing in power discrete components. It adheres to industry-standard specifications for power BJTs and is recognized for its quality and performance consistency. This transistor is commonly sourced from leading suppliers providing comprehensive datasheets and support, ensuring seamless integration into industrial and commercial power electronics designs.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current rating for this transistor is 8 amperes, allowing it to handle relatively high current loads in power amplification and switching applications without compromising reliability.

What package type does the transistor come in, and how does it affect thermal management?

This device is housed in a TO-220 package, which is designed for efficient heat dissipation. The package allows easy mounting on heatsinks, helping to maintain junction temperature within safe limits during high power operation.

What voltage levels can this transistor safely withstand?

The transistor has a collector-emitter voltage rating of 100 volts, which enables it to operate safely in