2N6301-Darlington Transistor by ON Semiconductor ?C High Gain, TO-3 Package

  • This transistor amplifies weak signals efficiently, enabling enhanced current gain for various electronic circuits.
  • Featuring a Darlington configuration, it provides high input impedance, improving signal sensitivity and control.
  • The compact package design allows for board-space savings and easy integration into densely populated PCBs.
  • Ideal for switching and amplification in power control applications, it supports reliable operation under varying loads.
  • Manufactured with stringent quality standards, it ensures consistent performance and long-term durability in demanding environments.
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2N6301-Darlington Overview

The 2N6301-Darlington is a high-gain, silicon NPN Darlington transistor designed for medium-power switching and amplification applications. It integrates two transistors in a single package, delivering a high current gain that simplifies drive circuitry and increases efficiency. With a collector-emitter voltage rating suitable for numerous industrial controls and power interfacing tasks, this device offers reliable performance in demanding environments. Its robust construction ensures consistent operation in switching and linear amplifier circuits. For detailed sourcing and technical data, visit IC Manufacturer.

2N6301-Darlington Key Features

  • High Current Gain: The Darlington configuration provides significantly amplified current gain, reducing the need for multiple driver stages and enabling efficient switching control.
  • Medium Power Handling: Designed to handle collector currents suitable for many industrial control applications, ensuring reliable operation under varying load conditions.
  • Voltage Tolerance: With a collector-emitter voltage rating tailored for typical medium-voltage circuits, it supports robust integration in power electronics.
  • Thermal Stability: Built to maintain performance across temperature variations, enhancing reliability in diverse operating environments.

2N6301-Darlington Technical Specifications

ParameterValue
Transistor TypeNPN Darlington
Collector-Emitter Voltage, VCEO60 V (typical)
Collector Current, IC4 A (max)
Power Dissipation, PD65 W (max)
DC Current Gain, hFE1000 (min)
Transition Frequency, fT100 kHz (typical)
Collector-Base Voltage, VCBO80 V (max)
Operating Junction Temperature, TJ150 ??C (max)

2N6301-Darlington Advantages vs Typical Alternatives

This transistor provides superior current gain and enhanced switching efficiency compared to standard single-transistor alternatives. Its integrated Darlington configuration reduces component count and simplifies circuit design. The device??s ability to handle medium power levels and withstand higher voltages ensures increased reliability and durability in industrial environments. These factors collectively enhance system performance while optimizing board space and thermal management.

Typical Applications

  • Power switching in industrial control systems, where reliable high current gain and voltage tolerance are critical for driving loads such as motors and solenoids.
  • Amplification stages in audio and signal processing circuits requiring medium power handling with low distortion.
  • Relay drivers in automation equipment to efficiently switch control signals with reduced input power demands.
  • General-purpose switching applications in power supplies and electronic interfaces, offering robust operation in moderate voltage environments.

2N6301-Darlington Brand Info

The 2N6301-Darlington is a well-established transistor model widely recognized in industrial electronics for its dependable performance and ease of integration. Manufactured under stringent quality standards, this device is favored for applications requiring efficient current amplification with high gain and medium power capacity. Its consistent availability and proven track record make it a trusted component in industrial design portfolios.

FAQ

What type of transistor configuration does this device use?

This device features a Darlington transistor configuration, which consists of two NPN transistors connected to provide a very high current gain. This configuration enables it to amplify weak input signals into much stronger output currents with improved efficiency.

What maximum voltage can this transistor handle?

The transistor supports a maximum collector-emitter voltage of approximately 60 volts, making it suitable for medium-voltage applications commonly found in industrial switching and control circuits.

How much current can the device safely switch?

The maximum collector current rating is typically 4 amperes, allowing it to handle moderate power loads such as small motors, relays, and solenoids in automation and control systems.

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产品中间询盘

Is this transistor suitable for high-frequency applications?

The device has a transition frequency around 100 kHz, which is adequate for many switching and low-frequency amplification tasks but is not optimized for high-frequency RF applications.

What are the thermal limits for safe operation?

The maximum operating junction temperature is rated at 150 ??C, ensuring reliable operation under typical industrial temperature conditions when proper cooling and heat dissipation practices are followed.

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