2N6211P-Transistor-PIND by ON Semiconductor – High Power Transistor, TO-3 Package

  • This transistor amplifies electrical signals, enabling precise control in electronic circuits for improved performance.
  • It features a robust current rating, ensuring stable operation under varying load conditions and preventing failure.
  • The compact package reduces board space, facilitating efficient layout in dense or portable electronic designs.
  • Ideal for switching applications, the 2N6211P-Transistor-PIND enhances response times and energy efficiency in devices.
  • Manufactured to meet rigorous quality standards, it offers consistent reliability across diverse operating environments.
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2N6211P-Transistor-PIND Overview

The 2N6211P-Transistor-PIND is a rugged, high-performance transistor designed for precise electronic switching and amplification tasks in industrial applications. With its reliable PNP configuration and robust electrical characteristics, it ensures stable operation under varying conditions. This device is optimized for medium power handling with good gain, making it ideal for use in analog circuits, signal processing, and power control. Sourced from a trusted supplier, the transistor offers consistent quality and durability needed for professional engineering projects. For more detailed specifications and sourcing, visit IC Manufacturer.

2N6211P-Transistor-PIND Key Features

  • High current gain: Provides efficient amplification, reducing the need for additional stages and saving circuit space.
  • PNP transistor configuration: Facilitates use in complementary circuit designs, enhancing flexibility in analog and switching applications.
  • Robust maximum collector current rating: Supports medium power loads reliably, improving device longevity in demanding environments.
  • Stable voltage ratings: Ensures safe operation within specified limits, minimizing risk of breakdown and enhancing system reliability.

2N6211P-Transistor-PIND Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 2 A
Power Dissipation (Ptot) 30 W
DC Current Gain (hFE) 10 to 50 ?C
Transition Frequency (fT) 2 MHz
Operating Junction Temperature (Tj) 150 ??C

2N6211P-Transistor-PIND Advantages vs Typical Alternatives

This transistor offers a balanced combination of moderate power handling and reliable gain performance, making it advantageous over typical alternatives that may either sacrifice efficiency or robustness. Its PNP configuration supports versatile circuit integration, while the stable voltage and current ratings enhance operational safety and longevity. These qualities make it a preferred choice where accuracy, reliability, and consistent switching are crucial within industrial electronics.

Typical Applications

  • Power amplification in analog circuits, providing reliable and efficient signal boost in industrial control systems and instrumentation.
  • Switching applications in power supply regulators and motor control circuits requiring stable medium current handling.
  • Complementary transistor pairs in push-pull amplifier stages or signal inverters for audio and communication devices.
  • General purpose amplification and switching in electronic test equipment and measurement devices.

2N6211P-Transistor-PIND Brand Info

The 2N6211P-Transistor-PIND is manufactured under strict quality standards by a reputable semiconductor producer, ensuring consistent performance and reliability. Designed for industrial-grade applications, this product line is well-regarded for its robust construction, stable electrical characteristics, and compatibility with a wide range of electronic systems. It is widely available through established distributors, supported by comprehensive datasheets and technical support resources.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current (IC) rating is 2 amperes, which allows the transistor to handle moderate power loads suitable for many industrial and control applications without performance degradation.

Is this transistor suitable for high-frequency switching applications?

This device has a transition frequency (fT) of approximately 2 MHz, making it more appropriate for low to medium frequency applications rather than very high-speed switching.

Can this transistor operate safely at high temperatures?

Yes, it supports an operating junction temperature up to 150??C, providing good thermal tolerance for demanding environments, but proper heat dissipation measures should still be implemented.

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产品中间询盘

What type of transistor configuration does it use?

The 2N6211P is a PNP transistor, suitable for use in complementary circuit designs and allowing flexibility in amplifier and switching circuit configurations.

Where can I find detailed datasheets and technical support?

Detailed datasheets and product support information are available through authorized distributors and the manufacturer??s official website, ensuring access to reliable technical resources for design and application guidance.

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