2N6193QFN/TR ON Semiconductor NPN Power Transistor, 2N6193QFN/TR, QFN Package

2N6193QFN/TR Overview

The 2N6193QFN/TR is a high-performance NPN power transistor designed for industrial and power amplification applications. Housed in a compact QFN package, it offers excellent thermal performance and reliable switching capabilities, making it suitable for high voltage and high current environments. Engineers and sourcing specialists will appreciate its robust design, ensuring durability and consistency in demanding electronic circuits. This device is optimized for efficient power management and integration into modern electronic systems. For detailed specifications and procurement, visit IC Manufacturer.

2N6193QFN/TR Key Features

• High Collector-Emitter Voltage: Supports up to 230 V, enabling use in high-voltage power supply and amplifier circuits.
• Collector Current Capacity: Handles continuous collector currents up to 15 A, suitable for high-power switching applications.
• Low Saturation Voltage: Minimizes power loss and improves efficiency in switching operations.
• Compact QFN Package: Provides enhanced thermal dissipation and space-saving PCB integration.
• Robust Thermal Resistance: Ensures reliable operation under elevated temperature conditions.
• Optimized Gain Characteristics: Facilitates stable amplification and switching performance.

2N6193QFN/TR Technical Specifications

2N6193QFN/TR Advantages vs Typical Alternatives

This transistor offers a superior combination of high voltage and high current handling in a compact QFN package, which improves thermal management and reduces PCB footprint compared to traditional TO-3 or TO-220 packages. Its low saturation voltage and robust gain characteristics enhance energy efficiency and switching accuracy, making it a reliable choice for power amplification and industrial control circuits over typical discrete alternatives.

Typical Applications

• Power Amplifiers in audio and industrial signal processing systems, where high current and voltage handling are essential for robust operation.
• Switching regulators and power supply circuits requiring efficient high-voltage transistors for precise control.
• Motor control circuits that demand reliable high-current switching performance under varying loads.
• Industrial automation systems where compact, heat-efficient transistor packages improve reliability and integration density.

2N6193QFN/TR Brand Info

The 2N6193QFN/TR is produced by a leading semiconductor manufacturer known for high-quality power transistors and advanced packaging technologies. This device reflects the brand??s commitment to delivering components that meet stringent industrial standards for performance, reliability, and thermal efficiency. Designed for demanding power applications, it benefits from rigorous quality control and extensive testing to ensure consistent operation in critical environments.

FAQ

What is the maximum collector-emitter voltage rating for this transistor?

The maximum collector-emitter voltage (V_CEO) is 230 V, allowing the transistor to handle high-voltage applications safely without breakdown under specified conditions.

How much continuous collector current can this device support?

This transistor supports a continuous collector current of up to 15 A, making it suitable for high-power switching and amplification tasks in industrial electronics.

What package type does this transistor come in, and what are its benefits?

The device is supplied in a QFN (Quad Flat No-lead) package, which offers excellent thermal dissipation, a smaller footprint for PCB space savings, and improved electrical performance compared to traditional leaded packages.

What are the typical gain characteristics of this transistor?

The DC current gain (h_FE) ranges from 40 to 160 depending on operating conditions, ensuring stable amplification and switching performance across various industrial applications.

Is this transistor suitable for high-frequency applications?

With a transition frequency (f_T) of approximately 4 MHz, this device is optimized for medium-frequency power applications rather than high-frequency RF circuits, balancing gain and power handling capability effectively.