2N6058-Darlington Transistor by ON Semiconductor ?C High Gain, TO-220 Package

  • This transistor provides high current gain, enabling efficient signal amplification in various circuits.
  • Its Darlington configuration ensures strong input sensitivity, improving switching performance and control.
  • The device??s through-hole package offers durability and easy integration into standard printed circuit boards.
  • Ideal for motor control applications where enhanced current handling supports stable and responsive operation.
  • Manufactured to meet consistent quality standards, ensuring dependable performance over extended use.
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2N6058-Darlington Overview

The 2N6058 is a high-power Darlington transistor designed for applications requiring enhanced current gain and robust switching capabilities. This device integrates two bipolar junction transistors in a Darlington configuration, offering high current amplification with a maximum collector current of 4 A and a voltage rating of 60 V. It is housed in a TO-220 package, facilitating efficient heat dissipation and ease of mounting on heat sinks. Ideal for industrial control, power amplifiers, and motor driver circuits, this transistor balances high gain with reliable thermal performance. For sourcing and technical details, refer to IC Manufacturer.

2N6058-Darlington Key Features

  • High current gain: Provides a typical DC current gain (hFE) of 1000, reducing base drive requirements and improving overall circuit efficiency.
  • Robust collector current capability: Supports continuous collector current up to 4 A, suitable for medium power switching and amplification tasks.
  • Voltage tolerance: Collector-Emitter voltage rating of 60 V ensures reliable operation in moderate voltage environments.
  • TO-220 package: Enables effective heat dissipation and simplifies integration into power electronics assemblies.
  • High gain bandwidth product: Offers a transition frequency (fT) of 3.5 MHz, facilitating faster switching performance in control circuits.
  • Safe operating area: Designed to withstand power dissipation of up to 115 W with proper heat sinking, enhancing device reliability.
  • Thermal stability: Maximum junction temperature of 150??C supports operation under demanding thermal conditions.

2N6058-Darlington Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)60V
Collector-Base Voltage (VCBO)80V
Emitter-Base Voltage (VEBO)5V
Collector Current (Continuous) (IC)4A
Power Dissipation (PD)115W
DC Current Gain (hFE) (typical)1000
Transition Frequency (fT)3.5MHz
Junction Temperature (TJ)150??C
Package TypeTO-220

2N6058-Darlington Advantages vs Typical Alternatives

This Darlington transistor offers significantly higher current gain compared to standard BJTs, reducing the base drive current required and improving circuit efficiency. Its robust collector current and voltage handling capabilities make it well-suited for industrial power control applications. The TO-220 package facilitates superior thermal management, enhancing reliability and longevity versus smaller or less rugged alternatives. These advantages ensure dependable performance in switching and amplification roles where both power and precision are critical.

Typical Applications

  • Power amplification circuits requiring high current gain and moderate voltage operation, such as audio amplifiers or signal boosters in industrial environments.
  • Motor control drivers where efficient switching and reliable current handling are essential to manage inductive loads.
  • Relay drivers and solenoid controls benefiting from the device??s high gain, enabling low input current control signals.
  • Switching regulators and power supply circuits that demand robust transistor components for load regulation and protection.

2N6058-Darlington Brand Info

The 2N6058 Darlington transistor is a classic high-gain, medium-power semiconductor device widely utilized in industrial electronics. Its design focuses on delivering consistent performance in power switching and amplification applications. Offered by multiple manufacturers and available through professional distribution channels, it remains a trusted component in control and power circuitry. The device??s TO-220 package ensures broad compatibility with standard heatsinking methods and industry-standard mounting protocols.

FAQ

What is the maximum collector current rating of the 2N6058?

The maximum continuous collector current for this transistor is rated at 4 amperes. This allows it to handle moderate power loads in switching and amplification applications without compromising reliability.

Can the 2N6058 be used in high-frequency switching applications?

The device has a transition frequency of approximately 3.5 MHz, making it suitable for moderate-frequency switching tasks. However, for very high-frequency applications, other transistors with higher fT values may be more appropriate.

What package type does the 2N6058 use, and why is it important?

This transistor is housed in a TO-220 package, which is important because it facilitates effective heat dissipation and easy mounting on heat sinks, crucial for maintaining device temperature within safe operating limits.

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Is the 2N6058 suitable for use in motor control circuits?

Yes, its high current gain and collector current capability make it well-suited for motor driver circuits where efficient switching and current amplification are required to control inductive loads.

What are the voltage limits of the 2N6058 transistor?

The device can handle up to 60 V between collector and emitter, and up to 80 V between collector and base, making it suitable for moderate voltage applications in industrial and power control environments.

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