2N6052-Darlington Overview
The 2N6052-Darlington transistor is a high-power silicon NPN Darlington device optimized for switching and amplification in industrial applications. It offers robust current gain and high voltage handling capabilities, making it suitable for demanding load control environments. This transistor integrates two transistors in a Darlington configuration, ensuring high input impedance and significant current amplification, which simplifies circuit design. Its rugged construction supports reliable operation under elevated collector-emitter voltages and collector currents. Engineers and sourcing specialists seeking a durable and efficient transistor for power switching can rely on this device. For detailed technical support and procurement, visit IC Manufacturer.
2N6052-Darlington Key Features
- High Current Gain: The Darlington pair configuration delivers a large current amplification, reducing the required base drive current and enabling efficient switching in power control circuits.
- High Collector-Emitter Voltage Rating: Supports voltages up to 60V, allowing use in moderately high-voltage applications without compromising reliability.
- Robust Collector Current Capability: Continuous collector current rating up to 4A ensures suitability for controlling heavy loads and motors.
- Integrated Thermal Protection: The device structure supports enhanced thermal dissipation, improving operational stability and longevity under load conditions.
2N6052-Darlington Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 80 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current Continuous (IC) | 4 | A |
| Collector Current Peak (ICM) | 8 | A |
| Power Dissipation (PD) | 115 | W |
| DC Current Gain (hFE) | 10000 (min) | |
| Transition Frequency (fT) | 20 | MHz |
2N6052-Darlington Advantages vs Typical Alternatives
This device provides superior current gain and higher collector current capacity compared to standard transistors, enabling more efficient switching with lower input drive currents. Its voltage ratings and robust power dissipation capability improve reliability under heavy loads. The integrated Darlington configuration reduces circuit complexity and enhances switching performance, making it a preferred choice over typical single-transistor alternatives in industrial power control applications.
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Typical Applications
- Power switching circuits in industrial automation systems, where high current handling and voltage tolerance are critical for controlling motors and solenoids efficiently.
- Relay drivers requiring high current gain to minimize control signal power consumption.
- Amplification stages in audio and signal processing equipment benefiting from high input impedance and gain.
- Load drivers in power supplies and battery management systems demanding robust switching components.
2N6052-Darlington Brand Info
The 2N6052-Darlington transistor is a well-established product in the portfolio of leading semiconductor manufacturers specializing in power transistors for industrial use. This device adheres to industry standards for quality and reliability, supported by extensive datasheets and application notes. Its proven track record in demanding environments ensures confidence for design engineers and procurement teams seeking dependable high-power transistor solutions.
FAQ
What is the maximum collector current rating for this Darlington transistor?
The maximum continuous collector current is rated at 4 amperes, with a peak current capability of up to 8 amperes. This allows it to handle substantial load currents safely in switching and amplification applications.
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Can this device operate at high voltages typical in industrial environments?
Yes, it supports a collector-emitter voltage of up to 60 volts and a collector-base voltage up to 80 volts, well-suited for many industrial voltage levels without risk of breakdown.
How does the Darlington configuration benefit circuit design?
The integrated Darlington setup provides very high current gain, reducing the base drive current required. This simplifies the driving circuitry and improves efficiency, especially in power switching applications.
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What power dissipation capabilities does this transistor have?
The device can dissipate up to 115 watts of power under specified conditions, aiding in reliable operation when switching or amplifying high currents at elevated voltages.
Is this transistor suitable for high-frequency applications?
With a transition frequency of approximately 20 MHz, it can be used in moderate frequency switching and amplification circuits, though it is primarily designed for power control rather than high-frequency RF use.







