2N6032-Transistor Overview
The 2N6032 transistor is a high-power NPN bipolar junction transistor designed for medium to high voltage switching and amplification applications. It features a collector-emitter voltage rating suitable for robust industrial use, making it ideal in power regulation and control circuits. This transistor offers reliable performance with a collector current capacity that supports demanding loads while maintaining thermal stability. Engineers and sourcing specialists can depend on this component for applications requiring consistent gain and durability. For more detailed product information and sourcing options, visit IC Manufacturer.
2N6032-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (V_CEO) | 100 V |
| Collector Current (I_C) | 3 A |
| Power Dissipation (P_D) | 30 W |
| DC Current Gain (h_FE) | 20 to 70 |
| Transition Frequency (f_T) | 3 MHz |
| Package Type | TO-3 Metal Can |
| Operating Temperature Range | -65??C to +200??C |
2N6032-Transistor Key Features
- High voltage tolerance: Supports up to 100 V collector-emitter voltage, ensuring reliable operation in power switching circuits.
- Robust current handling: Handles collector currents up to 3 A, suitable for medium power amplification and regulation applications.
- Thermal stability: Operates effectively over a wide temperature range (-65??C to 200??C), maintaining performance under harsh conditions.
- Low frequency operation: Transition frequency of 3 MHz, ideal for audio and power control circuits requiring moderate switching speeds.
Typical Applications
- Power amplifiers in audio equipment where stable high current gain and voltage handling ensure clear signal amplification.
- Switching regulators and power converters for efficient voltage control and energy management in industrial environments.
- Motor control circuits where reliable current handling and thermal endurance support consistent performance.
- General purpose medium power switching in automation systems requiring durable transistor operation.
2N6032-Transistor Advantages vs Typical Alternatives
This transistor stands out for its high voltage and current ratings combined with a robust metal TO-3 package, which provides superior thermal dissipation compared to plastic alternatives. Its broad operating temperature range and reliable gain characteristics make it a dependable choice for industrial power applications. These advantages translate to improved longevity and efficiency in demanding environments, making it preferable over lower-rated or less thermally efficient devices.
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2N6032-Transistor Brand Info
The 2N6032 is a classic power transistor originally introduced by major semiconductor manufacturers such as ON Semiconductor and Fairchild Semiconductor (now part of ON Semiconductor). It is widely recognized for its durability and performance consistency in industrial and commercial electronic designs. Available through numerous distributors, it remains a favored component for engineers requiring a rugged transistor with proven reliability in power switching and amplification tasks.
FAQ
What is the maximum collector current of this transistor?
The maximum collector current is rated at 3 amperes, allowing the transistor to handle moderate power loads typical in switching and amplification applications.
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Can this transistor be used in high-temperature environments?
Yes, the device supports an operating temperature range from -65??C up to +200??C, making it suitable for use in harsh or elevated temperature conditions.
What package type does this transistor come in?
It is housed in a TO-3 metal can package, which offers enhanced thermal dissipation and mechanical robustness compared to standard plastic packages.
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Is this transistor suitable for high-frequency applications?
Its transition frequency is approximately 3 MHz, which suits low to medium frequency applications such as audio amplification but is not ideal for high-frequency RF circuits.
How reliable is the gain performance of this transistor?
The DC current gain (h_FE) ranges from






