2N5795A-Dual-Transistor NPN Amplifier in TO-39 Metal Can Package by ON Semiconductor

2N5795A-Dual-Transistor Overview

The 2N5795A Dual-Transistor is a high-performance semiconductor device designed for amplification and switching applications in industrial electronic circuits. Featuring two NPN transistors integrated within a single package, it offers reliable operation under a wide range of voltage and current conditions. This device supports medium power handling capabilities and provides consistent gain characteristics, making it ideal for signal processing and driver stage implementations. With robust thermal and electrical parameters, it ensures durability and stable performance in demanding environments. Engineers and sourcing specialists can rely on this transistor for efficient circuit design and streamlined inventory management. More details can be found at IC Manufacturer.

2N5795A-Dual-Transistor Technical Specifications

2N5795A-Dual-Transistor Key Features

• Integrated dual NPN transistors: Enables compact circuit design by reducing board space and simplifying layouts.
• High voltage ratings up to 100 V: Suitable for moderate power applications requiring robustness and safety margins.
• Wide DC current gain range: Provides flexibility in biasing and amplification characteristics for various analog circuits.
• Reliable TO-39 packaging: Ensures effective heat dissipation and mechanical stability in industrial environments.
• Moderate transition frequency: Supports medium-speed switching and amplification tasks without excessive losses.

Typical Applications

• Signal amplification stages in audio and instrumentation circuits where dual transistor functionality enhances performance and reduces component count.
• Driver circuits for relay and solenoid control requiring reliable switching with moderate power handling.
• Analog switching and buffering in industrial automation systems benefiting from dual transistor integration.
• General-purpose transistor replacement in medium power amplifier designs and discrete component assemblies.

2N5795A-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor device offers a distinct advantage over single discrete transistors by integrating two matched NPN transistors in one package, improving circuit consistency and reducing assembly complexity. Its robust voltage and current ratings provide enhanced reliability in industrial settings. The wide current gain range supports versatile circuit designs, while the TO-39 package ensures superior thermal performance compared to plastic alternatives. These factors combine to deliver improved accuracy, efficiency, and long-term operational stability.

2N5795A-Dual-Transistor Brand Info

The 2N5795A is a standardized transistor model manufactured by multiple semiconductor suppliers in compliance with JEDEC industry standards. It is commonly produced by established brands specializing in discrete semiconductor components for industrial applications. These manufacturers ensure strict quality control and adherence to datasheet parameters, making the device suitable for demanding electronic designs. The product is widely available through authorized distributors, supporting global sourcing and supply chain reliability.

FAQ

What are the maximum voltage ratings for this dual transistor?

The maximum collector-emitter voltage (V_CEO) is rated at 70 V, and the collector-base voltage (V_CBO) is 100 V. These ratings ensure the device can safely operate in circuits with moderate voltage levels without breakdown.

How much collector