2N5795-Dual-Transistor by 2N Brand – High Gain Amplifier, TO-39 Metal Can Package

  • This dual-transistor device enables amplification and switching, improving circuit efficiency in compact designs.
  • Featuring a moderate gain parameter, it ensures stable signal amplification crucial for precise electronic control.
  • The compact package reduces board space, allowing for streamlined layouts in dense electronic assemblies.
  • Ideal for audio amplification circuits, it enhances sound clarity and responsiveness in consumer electronics.
  • Manufactured to meet standard reliability criteria, it supports consistent performance over extended use.
Microchip Technology-logo
产品上方询盘

2N5795-Dual-Transistor Overview

The 2N5795 is a dual transistor device designed to deliver reliable performance in general-purpose amplification and switching applications. Featuring two matched NPN transistors within a single package, it offers enhanced circuit density and consistent performance. Its robust electrical characteristics make it suitable for use in low to medium power stages, ensuring stable operation with moderate gain and frequency response. The integrated dual-transistor configuration reduces board space and simplifies design complexity, providing engineers and sourcing specialists a compact, dependable solution. For detailed component sourcing and additional technical resources, visit IC Manufacturer.

2N5795-Dual-Transistor Key Features

  • Matched Dual NPN Transistors: Ensures consistent gain and electrical characteristics, facilitating differential amplifier designs and balanced signal processing.
  • Moderate Gain and Frequency Response: Supports amplification in low to medium frequency ranges, suitable for audio and signal conditioning circuits.
  • Compact Dual Package: Reduces PCB footprint and component count, enhancing integration efficiency in complex circuit layouts.
  • Reliable Electrical Performance: Provides stable collector current and voltage ratings, enabling dependable operation under typical industrial conditions.

2N5795-Dual-Transistor Technical Specifications

ParameterValueUnit
Transistor TypeDual NPN
Collector-Emitter Voltage (VCEO)40V
Collector-Base Voltage (VCBO)60V
Emitter-Base Voltage (VEBO)6V
Collector Current (IC)150mA
DC Current Gain (hFE)40 to 120
Transition Frequency (fT)80MHz
Power Dissipation (Ptot)625mW

2N5795-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor offers balanced electrical characteristics and matched parameters, which typical single-transistor alternatives lack. Its integration reduces board space and improves circuit stability, while maintaining sufficient gain and frequency response for versatile industrial applications. Compared to discrete transistors, it simplifies design complexity, increases reliability, and enhances sourcing efficiency for engineers focused on effective component selection.

Typical Applications

  • Differential amplifier stages requiring closely matched transistor pairs for accurate signal processing and low distortion.
  • Small signal amplification in audio equipment, ensuring reliable gain and frequency behavior.
  • Switching circuits with moderate current demands, benefiting from integrated transistor pairs to reduce component count.
  • General-purpose low to medium power transistor applications within industrial control and instrumentation systems.

2N5795-Dual-Transistor Brand Info

The 2N5795 dual transistor is a classic semiconductor device widely recognized for its consistent performance and reliability. Manufactured under stringent quality standards, this product is designed to meet industrial requirements for dual transistor applications. Its established reputation and availability through trusted suppliers make it a dependable choice for engineers and sourcing specialists seeking proven transistor solutions with matched characteristics in a single package.

FAQ

What type of transistors are included in the 2N5795 dual package?

The device contains two matched NPN transistors integrated within one package. This pairing allows for symmetrical electrical characteristics, ideal for applications requiring balanced amplification or switching functions.

What is the maximum collector current supported by this dual transistor?

The maximum collector current rating is 150 mA per transistor, suitable for low to medium power applications where moderate current handling is sufficient.

Can this transistor pair be used in high-frequency circuits?

With a transition frequency of approximately 80 MHz, the device supports moderate frequency operation, making it appropriate for audio and some RF applications, though it is not intended for very high-frequency or microwave circuits.

📩 Contact Us

产品中间询盘

How does the dual transistor configuration benefit circuit design?

By integrating two matched transistors in one package, the device reduces board space and component count, simplifies layout, and ensures consistent matched performance, which is valuable in differential amplifiers and balanced signal stages.

What are the voltage ratings important for safe operation of this dual transistor?

The collector-emitter voltage rating is 40 V, collector-base is 60 V, and emitter-base voltage is 6 V. These ratings define the maximum voltages the transistors can safely withstand in normal operation.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?