2N5794UC-Dual-Transistor Overview
The 2N5794UC dual transistor is a complementary silicon device designed for high-performance amplification and switching applications. Integrating both NPN and PNP transistors in a single package, it offers efficient space-saving and optimized circuit design, reducing component count. With balanced electrical characteristics, it enables reliable operation in audio amplifiers, signal processing, and driver circuits. Its robust voltage and current ratings ensure dependable function under various operating conditions. Engineered for industrial and commercial electronics, the 2N5794UC provides a practical solution for engineers seeking compact and consistent transistor pairs. For more information, visit IC Manufacturer.
2N5794UC-Dual-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | Complementary NPN and PNP |
| Collector-Emitter Voltage (Vceo) | 50 V (NPN), -50 V (PNP) |
| Collector Current (Ic) | 1.5 A max |
| Power Dissipation (Pd) | 12.5 W (per transistor) |
| DC Current Gain (hFE) | 100 to 300 (typical) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | TO-39 Metal Can |
| Operating Temperature Range | -65??C to +200??C |
| Complementary Configuration | Matched NPN and PNP pair |
2N5794UC-Dual-Transistor Key Features
- Complementary Dual Transistor Pair: Enables efficient push-pull amplifier designs with matched characteristics for balanced performance.
- High Current Handling: Supports collector currents up to 1.5 A, facilitating robust switching and amplification in demanding applications.
- Wide Operating Temperature Range: Ensures stable operation from -65??C to +200??C, ideal for industrial and harsh environment deployments.
- High Gain and Frequency Response: Typical DC current gain up to 300 and transition frequency of 100 MHz support high-fidelity signal amplification.
Typical Applications
- Audio power amplifiers requiring complementary transistor pairs for efficient push-pull stages with low distortion and high linearity.
- Driver circuits in switching power supplies where matched NPN and PNP transistors provide balanced switching performance.
- Signal amplification in instrumentation and measurement equipment needing reliable, low-noise transistor pairs.
- General purpose amplification and switching applications in industrial control systems benefiting from robust voltage and current ratings.
2N5794UC-Dual-Transistor Advantages vs Typical Alternatives
This dual transistor device offers integrated complementary transistors with matched electrical characteristics, reducing circuit complexity compared to discrete transistor pairs. Its high current and voltage ratings provide enhanced reliability under heavy loads, while the TO-39 metal package ensures superior thermal performance. These factors combined yield improved efficiency, consistent gain, and long-term stability, making it a preferred choice over typical single transistors or less robust dual packages.
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2N5794UC-Dual-Transistor Brand Info
The 2N5794UC dual transistor is manufactured by a reputable semiconductor producer known for delivering high-quality discrete components. Packaged in a durable TO-39 metal can, it adheres to industry standards for reliability and performance. This product is commonly sourced from established distributors specializing in industrial-grade semiconductors and is widely trusted in both legacy and modern electronic designs requiring matched complementary transistor pairs.
FAQ
What is the maximum collector current rating for this dual transistor?
The maximum collector current rating for each transistor within the dual device is 1.5 amperes, allowing it to handle moderate to high current loads in switching and amplification circuits.
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Can this device operate in high-temperature environments?
Yes, the transistor pair is rated for an operating temperature range from -65??C up to +200??C, making it suitable for applications in harsh or industrial environments.
What package type does this dual transistor use?
The device is housed in a TO-39 metal can package, which provides robust thermal conductivity and mechanical protection for the transistors inside.







