2N5745-Transistor by ON Semiconductor | NPN Transistor | TO-18 Metal Can Package

  • This transistor amplifies electrical signals, enabling improved control in electronic circuits.
  • Its ability to handle moderate voltage ensures stable operation across various applications.
  • The compact package design allows for efficient use of board space in tight layouts.
  • Ideal for switching tasks in low-power devices, it supports efficient energy management.
  • Manufactured to meet standard quality criteria, it provides reliable performance over time.
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产品上方询盘

2N5745-Transistor Overview

The 2N5745 is a high-performance NPN silicon transistor designed for low-noise, high-frequency applications. It features a medium power rating with dependable switching and amplification capabilities, making it suitable for a variety of industrial and communication circuits. With a maximum collector current of 150mA and a transition frequency (fT) that supports RF operations, this transistor balances power handling and gain characteristics effectively. Its robust construction ensures reliable operation over a wide temperature range, making it a preferred choice for engineers seeking stable transistor performance. For detailed sourcing, visit IC Manufacturer.

2N5745-Transistor Key Features

  • High transition frequency: Supports efficient RF amplification and switching in high-frequency circuits.
  • Moderate collector current capacity: Handles up to 150mA, allowing for medium power applications without compromising reliability.
  • Low noise figure: Ensures signal integrity in sensitive analog and communication systems.
  • Wide operating temperature range: Maintains consistent performance in industrial and environmental extremes.

2N5745-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Silicon
Collector-Emitter Voltage (Vceo) 40 V
Collector-Base Voltage (Vcbo) 60 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 150 mA
Power Dissipation (Pc) 500 mW
Transition Frequency (fT) 100 MHz (typical)
DC Current Gain (hFE) 40 to 160 (varies with collector current)
Junction Temperature 150 ??C (max)

2N5745-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of medium power handling and high-frequency performance, making it more versatile than many low-power alternatives. Its low noise and stable gain characteristics provide enhanced signal fidelity, crucial for RF and analog applications. Compared to typical transistors in the same class, it delivers reliable operation at elevated temperatures and maintains consistent switching speeds, supporting robust industrial and communication system designs.

Typical Applications

  • RF amplification stages in communication devices, where low noise and moderate power handling are critical for signal clarity and system efficiency.
  • Switching circuits that require reliable operation at frequencies up to 100 MHz.
  • Medium power audio preamplifier circuits benefiting from stable gain and low distortion.
  • Industrial control circuits requiring durable performance across varied temperature environments.

2N5745-Transistor Brand Info

The 2N5745 transistor is a well-established component used by numerous semiconductor manufacturers specializing in discrete transistors. It is recognized for its consistent quality and adherence to industry-standard specifications, ensuring compatibility in a broad range of electronic designs. This product is commonly available from leading suppliers and is supported by comprehensive datasheets that provide detailed electrical and thermal characteristics for engineering applications.

FAQ

What is the maximum collector current rating of the 2N5745 transistor?

The maximum collector current for this transistor is specified as 150 milliamps (mA). This rating ensures it can handle moderate power levels suitable for small-signal amplification and switching applications without risk of damage.

Can this transistor be used in high-frequency applications?

Yes, the 2N5745 transistor has a typical transition frequency (fT) of approximately 100 MHz, making it suitable for RF amplification and other high-frequency circuits where fast switching and gain are required.

What voltage limits should be observed when using this transistor?

The maximum collector-emitter voltage (Vceo) is 40 volts, and the collector-base voltage (Vcbo) is 60 volts. Exceeding these limits could result in breakdown or permanent damage to the device, so circuit design should ensure voltages remain within these parameters.

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产品中间询盘

How does temperature affect the performance of the 2N5745 transistor?

This transistor is rated for a maximum junction temperature of 150??C, allowing reliable operation across a broad temperature range. Proper heat dissipation and thermal management are essential to maintain performance and avoid thermal runaway.

Is the 2N5745 suitable for low-noise amplifier circuits?

Yes, its low noise figure and stable gain make the 2N5745 suitable for use in low-noise amplifier stages, particularly in communication and audio applications where signal integrity is critical.

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