2N5682E4-Transistor-RoHS Overview
The 2N5682E4 is a high-performance NPN bipolar junction transistor designed for robust switching and amplification tasks in industrial and commercial electronics. Compliant with RoHS standards, this transistor ensures environmentally safe operation without compromising reliability or electrical performance. Its medium power rating and high gain characteristics make it suitable for applications requiring stable amplification and switching under moderate voltage and current conditions. Manufactured with consistency and quality, the 2N5682E4 provides engineers and sourcing specialists a dependable solution for integration into various electronic circuits. For detailed technical support and sourcing, visit the IC Manufacturer website.
2N5682E4-Transistor-RoHS Key Features
- Medium Power Handling: Supports collector current up to 1.5A, enabling effective control of moderate power loads with minimal thermal stress.
- High Current Gain (hFE): Offers a gain range of 40 to 320, ensuring efficient signal amplification, which is critical for low-noise, high-precision applications.
- Wide Voltage Rating: Collector-emitter voltage up to 60V allows flexibility in diverse circuit designs demanding reliable switching at higher voltages.
- RoHS Compliant: Environmentally friendly design meets international lead-free standards, facilitating use in green manufacturing processes and end-product certifications.
2N5682E4-Transistor-RoHS Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vceo) | 60 | V |
| Collector-Base Voltage (Vcbo) | 75 | V |
| Emitter-Base Voltage (Vebo) | 5 | V |
| Collector Current (Ic) | 1.5 | A |
| Power Dissipation (Pc) | 25 | W |
| DC Current Gain (hFE) | 40 to 320 | ?? |
| Transition Frequency (fT) | 30 | MHz |
| Junction Temperature Range (Tj) | -65 to +150 | ??C |
2N5682E4-Transistor-RoHS Advantages vs Typical Alternatives
This transistor offers a balanced combination of high current gain and moderate power handling, making it superior to many general-purpose alternatives in precision amplification and switching. Its wide voltage tolerance and RoHS compliance ensure reliable operation in environmentally conscious designs. Compared to typical transistors, it provides enhanced gain stability and thermal robustness, which translates to improved circuit efficiency and longevity in industrial applications.
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Typical Applications
- General-purpose switching and amplification in analog and digital circuits, where stable gain and moderate power rating are required for reliable performance over a wide temperature range.
- Driver stages in audio amplification systems, benefiting from the transistor??s high gain and frequency response up to 30 MHz.
- Power regulation and control circuits, leveraging its ability to handle collector currents up to 1.5A and dissipate up to 25W safely.
- Industrial automation and control equipment, where ruggedness and compliance with RoHS directives ensure long-term operational reliability.
2N5682E4-Transistor-RoHS Brand Info
The 2N5682E4 is produced by a leading semiconductor manufacturer known for delivering high-quality bipolar transistors tailored to industrial and commercial electronics markets. This product is engineered to meet stringent performance criteria while adhering to global environmental standards such as RoHS. The brand emphasizes consistency, durability, and technical support, ensuring customers receive comprehensive solutions for demanding electronic applications.
FAQ
What is the maximum collector current rating of this transistor?
The transistor is rated for a maximum collector current (Ic) of 1.5 amperes, allowing it to handle moderate power loads effectively in switching and amplification circuits without significant thermal issues.
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Is the 2N5682E4 compliant with environmental regulations?
Yes, this transistor is fully RoHS compliant, meaning it is free from hazardous substances like lead and cadmium, making it suitable for environmentally conscious manufacturing and products.
What type of transistor is the 2N5682E4?
It is an NPN bipolar junction transistor designed primarily for medium power amplification and switching applications, featuring a typical current gain (hFE) that ranges between 40 and 320.
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What is the maximum voltage this transistor can handle?
The device can withstand a collector-emitter voltage (Vceo) of up to 60 volts and a collector-base voltage (Vcbo) of 75 volts, providing flexibility for various circuit voltage requirements.
What frequency response can be expected from this transistor?
The transistor exhibits a transition frequency (fT) of approximately 30 MHz, making it suitable for moderate-frequency amplification tasks in both analog and digital circuit designs.
