2N5682E3-Transistor-RoHS by ON Semiconductor – NPN Transistor, TO-39 Package

  • Acts as a general-purpose transistor enabling signal amplification and switching in electronic circuits.
  • Features a specific voltage rating that ensures stable operation under typical load conditions.
  • The compact package type supports efficient board layout and conserves valuable PCB space.
  • Ideal for use in low to medium power amplifiers, improving overall circuit responsiveness and control.
  • Manufactured to meet RoHS standards, enhancing environmental compliance and long-term reliability.
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产品上方询盘

2N5682E3-Transistor-RoHS Overview

The 2N5682E3 transistor is a high-performance bipolar junction transistor (BJT) designed for switching and amplification in industrial electronics. Engineered to comply with RoHS standards, it offers environmentally conscious manufacturing without sacrificing electrical performance. This transistor supports medium power applications with reliable gain and stable operation across a wide range of temperatures. Its robust construction and electrical characteristics make it suitable for demanding environments where durability and consistency are critical. For sourcing and detailed product inquiries, visit IC Manufacturer.

2N5682E3-Transistor-RoHS Key Features

  • High current handling capability: Supports collector currents up to 10A, enabling efficient power switching and amplification in industrial circuits.
  • Low saturation voltage: Minimizes power loss during conduction, enhancing overall circuit efficiency and thermal management.
  • Wide voltage rating: Collector-emitter voltage rating up to 60V provides flexibility for various power supply configurations.
  • RoHS compliant construction: Ensures environmental safety and regulatory compliance without compromising device reliability.

2N5682E3-Transistor-RoHS Technical Specifications

Parameter Specification
Collector-Emitter Voltage (VCEO) 60 V
Collector Current (IC) 10 A
Power Dissipation (PD) 80 W
DC Current Gain (hFE) 40 to 160
Transition Frequency (fT) 4 MHz
Saturation Voltage (VCE(sat)) 1.2 V (typical at IC=5A)
Operating Junction Temperature (TJ) -65??C to +200??C
Package Type TO-3

2N5682E3-Transistor-RoHS Advantages vs Typical Alternatives

This transistor excels in combining high current capacity with low saturation voltage, reducing power dissipation compared to typical BJTs. Its wide operating temperature range and robust TO-3 package ensure enhanced reliability in industrial power switching and amplification tasks. The RoHS compliance adds environmental assurance, making it preferable over non-compliant devices without sacrificing performance or durability.

Typical Applications

  • Power amplifiers in audio and industrial control systems, where high current and voltage handling are essential for performance and reliability.
  • Motor control circuits requiring efficient switching and thermal stability under variable load conditions.
  • Voltage regulators and power supply stages benefiting from low saturation voltage and robust power dissipation.
  • General-purpose switching in industrial automation systems demanding long-term durability and consistent electrical parameters.

2N5682E3-Transistor-RoHS Brand Info

The 2N5682E3 is manufactured under strict quality controls ensuring RoHS compliance and superior electrical characteristics. Packaged in a rugged TO-3 metal can, this transistor is designed to meet industrial standards for power switching and amplification. The brand emphasizes reliability, environmental responsibility, and consistent performance, catering to engineers and sourcing specialists seeking proven, high-quality discrete semiconductors.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current is rated at 10 amperes, allowing the transistor to handle significant power levels suitable for medium to high power applications.

Is this transistor suitable for high-temperature environments?

Yes, the device operates reliably over a wide junction temperature range from -65??C up to +200??C, making it appropriate for harsh industrial conditions.

What package type does this transistor use?

It is housed in a TO-3 metal can package, providing excellent thermal dissipation and mechanical durability for demanding applications.

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产品中间询盘

Does the 2N5682E3 comply with environmental regulations?

Yes, this transistor is RoHS compliant, ensuring it meets current environmental standards by restricting hazardous substances during manufacturing.

What are typical applications for this transistor?

This device is commonly used in power amplifiers, motor control circuits, voltage regulators, and general-purpose switching within industrial electronics requiring robust power handling and thermal stability.

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