2N5680-Transistor by ON Semiconductor – High-Power NPN Transistor, TO-39 Package

2N5680-Transistor Overview

The 2N5680 transistor is a high-performance NPN bipolar junction transistor designed for power switching and amplification in industrial electronics. It provides robust collector current handling up to 10 A and collector-emitter voltage ratings of 60 V, making it suitable for medium-power applications requiring reliable performance. Its TO-3 metal can package ensures excellent thermal dissipation and mechanical durability under demanding operating conditions. Engineers and sourcing specialists can rely on this transistor for applications needing strong gain characteristics and stable operation, backed by standard semiconductor manufacturing quality. For detailed technical support and sourcing, visit IC Manufacturer.

2N5680-Transistor Key Features

• High collector current capacity: With a maximum collector current of 10 A, this transistor supports heavy load switching and power amplification effectively.
• Moderate voltage rating: The 60 V collector-emitter voltage rating allows safe operation in medium-voltage circuits.
• TO-3 package for thermal management: The metal can package enhances heat dissipation, improving reliability in high-power environments.
• Stable gain characteristics: A current gain (hFE) typically between 15 and 70 ensures consistent performance in analog signal applications.

2N5680-Transistor Technical Specifications

2N5680-Transistor Advantages vs Typical Alternatives

This transistor offers a robust combination of high current handling and power dissipation in a rugged TO-3 package, outperforming many standard small-signal transistors. Its higher voltage tolerance and stable gain make it ideal for demanding industrial power circuits where reliability and thermal stability are critical. Compared to typical lower-power alternatives, this device ensures longer operational life and improved system efficiency.

Typical Applications

• Power amplification in audio and industrial control systems, where high current and voltage operation are required to drive loads effectively.
• Switching regulators and power supply circuits that demand reliable transistor performance under varying load conditions.
• Motor control circuits benefiting from the device??s ability to handle surge currents and dissipate heat efficiently.
• General-purpose medium-power switching applications in industrial automation and instrumentation setups.

2N5680-Transistor Brand Info

The 2N5680 transistor is a well-established semiconductor product manufactured following industry standards for power transistors. It is recognized for its consistent quality, rugged design, and wide availability through multiple reliable suppliers. This transistor??s brand reputation is built on proven performance in industrial and power electronics applications, offering engineers a dependable component for medium-power switching and amplification challenges.

FAQ

What is the maximum collector current rating of the 2N5680 transistor?

The maximum collector current for this transistor is rated at 10 amperes, allowing it to handle significant load currents typical in power switching and amplification applications.

What package type does the 2N5680 use, and why is it important?

This transistor is housed in a TO-3 metal can package, which is crucial for efficient heat dissipation and mechanical robustness, ensuring reliable operation under high power and temperature conditions.

Can the 2N5680 transistor be used in audio amplification circuits?

Yes, its current gain and power handling capabilities make it suitable for audio power amplifier stages and other analog amplification applications requiring medium power levels.

What is the typical current gain (hFE) range for this transistor?

The current gain typically ranges from 15 to 70, providing stable amplification characteristics that support consistent signal amplification in various circuit designs.

What is the maximum junction temperature for safe operation of the 2N5680?

The maximum junction temperature is specified at 200??C, enabling the transistor to operate safely in high-temperature environments when properly mounted and cooled.