2N5666S-Transistor by ON Semiconductor | NPN Transistor | TO-39 Package

  • This transistor amplifies electrical signals, enabling precise control in various electronic circuits.
  • Its voltage rating supports stable operation under varying electrical loads, enhancing circuit reliability.
  • The compact package minimizes board space, facilitating efficient design in tight electronic assemblies.
  • Ideal for switching applications, it improves performance in power management and signal processing tasks.
  • Manufactured to meet industry standards, it ensures consistent operation and long-term durability.
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产品上方询盘

2N5666S-Transistor Overview

The 2N5666S is a silicon NPN bipolar junction transistor designed for general-purpose switching and amplification tasks in industrial and electronic applications. Featuring a medium power rating and robust voltage handling capabilities, this transistor is well-suited for circuits requiring reliable current gain and stable operation under moderate power dissipation. Its design supports efficient signal amplification and switching in a range of analog and digital electronic systems. Engineers and sourcing specialists can rely on the 2N5666S for consistent performance in control, driver, and interface circuits. For further details and sourcing options, visit IC Manufacturer.

2N5666S-Transistor Key Features

  • Medium Power Handling: Supports collector current up to 1.5A, enabling effective control of moderate loads in switching applications.
  • High Voltage Capability: Collector-emitter voltage rating of 40V ensures operation in circuits with moderate supply voltages without breakdown.
  • Reliable Gain Performance: Current gain (hFE) range enables stable amplification, critical for signal integrity in analog stages.
  • Efficient Switching: Low saturation voltage enhances switching efficiency, reducing power loss and heat generation.

2N5666S-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN
Collector-Emitter Voltage (Vceo) 40 V
Collector-Base Voltage (Vcbo) 60 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 1.5 A
Power Dissipation (Pc) 1 W
DC Current Gain (hFE) 40 to 160
Transition Frequency (fT) 90 MHz
Package TO-18 Metal Can

2N5666S-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of moderate power capability and reliable voltage tolerance, making it an advantageous choice over typical small-signal transistors that may lack sufficient current rating. Compared to high-power alternatives, it provides a more compact footprint and efficient gain performance. Its low saturation voltage enhances switching speed and reduces heat dissipation, improving circuit efficiency and reliability in industrial control and signal processing applications.

Typical Applications

  • General-purpose switching and amplification in industrial control circuits, where medium power handling and reliable gain are essential to drive relays and indicators.
  • Signal amplification in audio and instrumentation circuits requiring stable current gain over a wide frequency range.
  • Driver stage transistor for interfacing logic circuits with higher power loads in embedded systems and automation.
  • Switching element in DC motor control and power regulation circuits, benefiting from its efficient conduction and voltage ratings.

2N5666S-Transistor Brand Info

This transistor is offered by reputable semiconductor manufacturers specializing in discrete components for industrial and electronic applications. It is packaged in a TO-18 metal can, known for superior thermal dissipation and mechanical robustness. The device is manufactured under strict quality controls assuring consistent electrical performance and durability. Its proven design and availability make it a preferred choice in supply chains for automation, instrumentation, and control system manufacturers.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for this transistor is 1.5 amperes, allowing it to handle moderate load currents in switching and amplification circuits without risk of damage when operated within specified limits.

Can this transistor be used in high-frequency applications?

Yes, the device features a transition frequency of approximately 90 MHz, making it suitable for moderate frequency signal amplification and switching tasks in many industrial and instrumentation applications.

What package type does this transistor use, and why is it important?

This transistor is housed in a TO-18 metal can package, which provides excellent thermal conductivity and mechanical stability, beneficial for reliable operation and heat dissipation in demanding environments.

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产品中间询盘

How does the voltage rating impact circuit design with this transistor?

The collector-emitter voltage rating of 40 volts ensures the transistor can safely switch and amplify signals in circuits with supply voltages up to this level, protecting against breakdown and enhancing design reliability.

Is this transistor suitable for audio amplification applications?

Yes, the stable current gain and moderate frequency response make this transistor appropriate for audio signal amplification stages, where consistent gain and low distortion are important.

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