2N5662-Transistor by ON Semiconductor | NPN Transistor | TO-39 Metal Can Package

2N5662-Transistor Overview

The 2N5662 is a high-performance silicon NPN bipolar junction transistor designed for medium-power amplification and switching applications. It offers reliable operation with a maximum collector current of 5A and a collector-emitter voltage rating of 60V, making it suitable for a wide range of industrial and consumer electronics. Thanks to its robust construction and efficient thermal characteristics, the 2N5662 ensures stable performance under demanding conditions. This transistor is ideal for engineers seeking a durable solution for power amplification, switching circuits, and other general-purpose uses. For more detailed technical data, visit IC Manufacturer.

2N5662-Transistor Key Features

• High Collector Current: Supports up to 5A, enabling efficient handling of medium-power loads without compromising performance.
• Collector-Emitter Voltage: Rated at 60V, this transistor is suitable for applications requiring moderate voltage operation.
• Gain Bandwidth Product: Offers a current gain (hFE) range of 20 to 70, allowing for effective signal amplification in diverse circuit designs.
• Thermal Stability: With a maximum junction temperature of 200??C, it provides reliable operation in environments with elevated temperatures.

2N5662-Transistor Technical Specifications

2N5662-Transistor Advantages vs Typical Alternatives

This transistor delivers a balanced combination of high current capability and moderate voltage rating, making it more versatile than many comparable devices in its class. Its robust power dissipation rating and wide gain range ensure reliable amplification and switching under diverse operating conditions. Compared to typical alternatives, it offers excellent thermal stability and consistent gain performance, enhancing circuit reliability and reducing the need for extensive heat sinking in industrial applications.

Typical Applications

• Power Amplification: Ideal for medium-power audio amplifiers and signal boosters where stable gain and current handling are critical.
• Switching Circuits: Suitable for relay drivers and other switching elements in control systems requiring reliable transistor operation.
• Industrial Controls: Used in automation systems where moderate voltage and current specifications align with control signal requirements.
• Consumer Electronics: Employed in devices requiring dependable transistor operation for amplification or switching tasks.

2N5662-Transistor Brand Info

The 2N5662 is a well-established transistor model widely recognized in the semiconductor industry for its dependable performance and robust design. Manufactured to meet stringent quality standards, this device is favored by engineers and sourcing specialists for applications demanding consistent power handling and thermal reliability. Its compatibility with standard transistor packages facilitates easy integration into existing designs, ensuring seamless adoption in both legacy and modern electronic systems.

FAQ

What is the maximum collector current for this transistor?

The device supports a maximum collector current of 5 amperes, allowing it to handle medium-power loads efficiently in amplification and switching circuits.

What voltage ratings are important when selecting this transistor?

This transistor has a collector-emitter voltage rating of 60 volts and a collector-base voltage rating of 100 volts, which define its suitable operating voltage range for various applications.

How does the gain (hFE) range affect circuit design?

The current gain ranges from 20 to 70, providing flexibility in amplification levels. This allows engineers to design circuits with predictable and stable signal amplification characteristics.

What are the thermal considerations for using this transistor?

With a maximum junction temperature of 200??C and a power dissipation rating of 75 watts, the transistor can operate reliably in environments with elevated temperatures, though appropriate heat sinking is recommended to maintain optimal performance.

Is this transistor suitable for high-frequency applications?

While the exact transition frequency is unspecified, the device is primarily designed for medium-power amplification and switching rather than high-frequency RF applications.