2N5661P-Transistor-PIND Overview
The 2N5661P-Transistor-PIND is a precision silicon phototransistor designed for high-sensitivity light detection applications. Engineered to provide reliable and consistent photoelectric conversion, it features a PIN diode structure with integrated transistor amplification. This device is optimized for use in optical sensing, communication, and industrial automation systems where accurate light detection and signal integrity are critical. With a robust construction and well-defined electrical characteristics, the 2N5661P-Transistor-PIND delivers dependable performance in demanding environments. For trusted sourcing and detailed product support, visit IC Manufacturer.
2N5661P-Transistor-PIND Key Features
- High photosensitivity: Enables superior detection of low-level light signals, improving system responsiveness.
- Integrated transistor amplification: Facilitates direct electrical output without the need for external amplifiers, simplifying circuit design.
- Stable operation over temperature: Ensures consistent performance even in industrial environments with varying thermal conditions.
- Compact package design: Allows easy integration into space-constrained applications without compromising functionality.
2N5661P-Transistor-PIND Technical Specifications
| Parameter | Specification |
|---|---|
| Type | Silicon Phototransistor with PIN diode |
| Collector-Emitter Voltage (VCEO) | 30 V |
| Collector Current (IC) | 50 mA |
| Power Dissipation (PD) | 300 mW |
| Peak Sensitivity Wavelength | 900 nm (near-infrared) |
| Rise Time | ?? 1 ??s |
| Package Type | TO-18 metal can |
| Operating Temperature Range | -55??C to +125??C |
| Dark Current | ?? 50 nA |
2N5661P-Transistor-PIND Advantages vs Typical Alternatives
This device offers enhanced photosensitivity and fast response times compared to standard phototransistors, making it ideal for precise optical sensing. Its integrated transistor reduces the need for external amplification, simplifying circuit design and improving reliability. The robust metal can package ensures improved thermal management and mechanical protection, providing superior durability versus typical plastic-encapsulated alternatives.
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Typical Applications
- Optical communication receivers requiring fast and accurate light signal detection for data integrity and transmission efficiency.
- Industrial automation sensors monitoring presence or position based on light interruption or reflection.
- Light measurement instruments where precise photodetection impacts measurement accuracy.
- Optoelectronic switching circuits benefiting from the transistor??s integrated amplification for simplified interface.
2N5661P-Transistor-PIND Brand Info
The 2N5661P-Transistor-PIND is a well-established product within the semiconductor industry, recognized for its precision and reliability. Manufactured under stringent quality controls, it meets industrial standards for phototransistor devices. This product is part of a broader portfolio designed to support demanding optical sensing and photodetection applications, offering engineers a trusted component from a reputable semiconductor brand.
FAQ
What is the primary function of the 2N5661P-Transistor-PIND?
The primary function is to detect light signals and convert them into electrical signals using its PIN photodiode structure combined with an integrated transistor amplifier, providing a direct output suitable for further electronic processing.
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What wavelength range does this phototransistor operate best in?
This device has peak sensitivity near 900 nm, making it especially effective for near-infrared light detection commonly used in optical communication and sensing applications.
Can this phototransistor be used in high-temperature environments?
Yes, the product is rated for operation across a wide temperature range from -55??C to +125??C, making it suitable for harsh or industrial environments with significant temperature variations.
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What packaging does the 2N5661P-Transistor-PIND come in?
It is housed in a TO-18 metal can package which provides excellent thermal dissipation and mechanical protection, enhancing device reliability in demanding applications.
Is external amplification required when using this device?
No, the integrated transistor within the device provides built-in signal amplification, reducing or often eliminating the need for additional external amplifiers in the circuit design.
