2N5582-Transistor Overview
The 2N5582 is a high-voltage, PNP bipolar junction transistor designed for medium-power switching and amplification applications. It features a maximum collector-emitter voltage of 100V and a continuous collector current rating suitable for industrial and commercial electronics. This transistor offers robust performance with a complementary NPN counterpart, making it a reliable choice for push-pull amplifier stages, power switching circuits, and general-purpose amplification. Its TO-39 metal can package provides excellent thermal dissipation and mechanical stability, ensuring durability under demanding conditions. For engineers and sourcing specialists seeking dependable semiconductor components, the 2N5582 from IC Manufacturer delivers consistent electrical characteristics and proven reliability.
2N5582-Transistor Key Features
- High Voltage Capability: With a collector-emitter voltage rating of 100V, it supports applications requiring elevated voltage handling without compromising device integrity.
- Moderate Collector Current: Rated for continuous collector current of up to 1.5A, enabling efficient power switching and amplification in medium power circuits.
- Complementary Pair Compatibility: Designed as the PNP counterpart to the 2N5551 NPN transistor, simplifying the design of push-pull amplifier stages and symmetrical circuits.
- Robust Packaging: The TO-39 metal can package ensures effective heat dissipation, enhancing operational stability and long-term reliability.
2N5582-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 100 | V |
| Collector-Base Voltage (VCBO) | 120 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 1.5 | A |
| Power Dissipation (Ptot) | 30 | W |
| Transition Frequency (fT) | 30 | MHz |
| DC Current Gain (hFE) | 40 to 160 | ?C |
| Package Type | TO-39 | ?C |
2N5582-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage handling and moderate current capacity compared to many general-purpose PNP transistors, making it ideal for circuits requiring robust switching and amplification. Its metal can package enhances thermal management and reliability, providing a clear advantage over plastic-encapsulated alternatives. The complementary design with the 2N5551 simplifies symmetrical circuit design, improving overall circuit efficiency and reducing sourcing complexity for engineers.
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Typical Applications
- Push-pull amplifier stages where complementary transistor pairs are required for efficient signal amplification with minimal distortion.
- Power switching circuits in industrial control systems that demand high voltage tolerance and reliable switching performance.
- General-purpose medium power amplification in audio and instrumentation equipment requiring stable gain and frequency response.
- Voltage regulation circuits and driver stages in power supply units where durability and precise control are essential.
2N5582-Transistor Brand Info
The 2N5582 transistor is a well-established product widely recognized in the semiconductor industry for its robust electrical characteristics and dependable performance. Manufactured under stringent quality controls by IC Manufacturer, this device benefits from decades of design optimization. It is supplied in a TO-39 metal can package, which offers enhanced mechanical strength and thermal dissipation. The product is supported by comprehensive datasheets and application notes, making it a preferred choice for engineers designing high-voltage and medium-power circuits.
FAQ
What is the maximum collector current rating for this transistor?
The maximum continuous collector current for this transistor is 1.5 amperes, allowing it to handle moderate power levels typical in switching and amplification applications.
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What package type does this transistor use, and why is it important?
This transistor is housed in a TO-39 metal can package. This packaging offers superior heat dissipation and mechanical durability compared to plastic packages, which is crucial for maintaining performance and reliability in high-stress environments.
Can this transistor be used in complementary circuits?
Yes, it is designed as the PNP counterpart to the 2N5551 NPN transistor. This complementary pairing is beneficial in push-pull amplifier configurations and other symmetrical circuit designs.
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What is the typical gain (hFE) range of this transistor?
The DC current gain (hFE) varies between 40 and 160, depending on operating conditions. This range allows for flexible use in amplification applications where moderate gain is required.
Is this transistor suitable for high-frequency applications?
With a transition frequency (fT) of approximately 30 MHz, this device is suitable for medium-frequency operation but may not be ideal for very high-frequency RF applications. It performs well in audio and low to mid-frequency switching circuits.
