2N5416U4-Transistor PNP Amplifier Transistor in TO-39 Metal Can Package by ON Semiconductor

2N5416U4-Transistor Overview

The 2N5416U4 is a high-voltage PNP transistor designed for a variety of medium power amplification and switching applications. It offers reliable performance with a collector-emitter voltage rating suitable for demanding industrial environments. Engineered for linear amplification and switching circuits, this transistor supports efficient current handling and robust thermal stability under typical operating conditions. Its construction and specifications make it an ideal choice for engineers seeking dependable semiconductor components for analog signal processing and power management tasks. Available through IC Manufacturer, the device meets industry standards for quality and consistency.

2N5416U4-Transistor Technical Specifications

2N5416U4-Transistor Key Features

• High voltage rating: Supports collector-emitter voltages up to 140 V, enabling operation in high-voltage switching and amplification circuits.
• Robust current capacity: Handles collector currents up to 600 mA, suitable for medium power applications requiring reliable current flow.
• Wide gain range: DC current gain between 40 and 100 provides flexibility in circuit design, optimizing amplification performance.
• Thermal reliability: Power dissipation rating of 625 mW ensures stable operation under typical thermal loads, enhancing device longevity.

Typical Applications

• Audio frequency amplification circuits requiring low distortion and stable gain performance in industrial audio equipment.
• Switching applications in power management systems where voltage handling and current capacity are critical.
• General purpose amplification in analog signal processing for instrumentation and control systems.
• Driver stages in relay control circuits leveraging the transistor??s robust voltage and current ratings.

2N5416U4-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage handling and reliable current capacity compared to many general-purpose alternatives. Its high collector-emitter voltage rating and consistent gain range ensure precise amplification with reduced risk of breakdown in high-voltage environments. Additionally, its thermal dissipation capability supports sustained operation under industrial conditions, making it a dependable choice for engineers requiring a balance of sensitivity, power, and durability in semiconductor components.

2N5416U4-Transistor Brand Info

The 2N5416U4 transistor is traditionally associated with well-established semiconductor manufacturers specializing in discrete components. Known for producing rugged and reliable transistors, these brands provide thorough quality control and standardized testing to ensure each unit meets stringent electrical and mechanical specifications. The device is commonly available through authorized distributors and industrial suppliers, backed by comprehensive datasheets and application notes to support integration into complex electronic systems.

FAQ

What type of transistor is the 2N5416U4?

The 2N5416U4 is a PNP bipolar junction transistor (BJT) designed primarily for medium power applications, offering high voltage and current capabilities suitable for amplification and switching tasks.

What is the maximum collector-emitter voltage rating for this transistor?

This transistor supports a maximum collector-emitter voltage of 140 volts, enabling it to function reliably in circuits exposed to relatively high voltage conditions.

Can this transistor be used in audio amplifier circuits?

Yes, due to its linear amplification characteristics and stable