2N5339QFN/TR Overview
The 2N5339QFN/TR is a high-performance silicon NPN transistor designed for medium power amplification and switching applications. Packaged in a QFN form factor, it offers efficient thermal management and compact integration into modern electronic assemblies. With a collector-emitter voltage rating suitable for a wide range of industrial uses, this transistor ensures reliable operation under demanding conditions. Its robust construction and optimized electrical characteristics make it an ideal choice for engineers seeking consistent performance in power control and amplification circuits. For detailed specifications and sourcing, visit the IC Manufacturer.
2N5339QFN/TR Key Features
- High voltage capability: Supports collector-emitter voltages up to 80 V, enabling operation in medium power applications with enhanced safety margins.
- Moderate current rating: Handles collector currents up to 1.5 A, providing sufficient drive for various switching and amplification tasks.
- Compact QFN package: Facilitates efficient PCB space utilization and improved heat dissipation, which is critical for high-density industrial systems.
- Fast switching characteristics: Enables efficient operation in high-frequency circuits, reducing power losses and improving overall system efficiency.
2N5339QFN/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 80 | V |
| Collector-Base Voltage (VCBO) | 100 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 1.5 | A |
| Power Dissipation (Ptot) | 1.25 | W |
| Transition Frequency (fT) | 100 | MHz |
| DC Current Gain (hFE) | 40 to 160 | ?? |
| Operating Junction Temperature (Tj) | -65 to +150 | ??C |
2N5339QFN/TR Advantages vs Typical Alternatives
This transistor distinguishes itself through a combination of high voltage tolerance and moderate current handling in a compact QFN package, offering superior thermal performance and reliable operation. Compared to typical bipolar transistors, it provides a balanced trade-off between gain and switching speed, making it highly suitable for industrial amplification and switching roles. Its robust voltage ratings and thermal limits enhance durability and integration flexibility in demanding environments.
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Typical Applications
- Medium power amplification circuits in industrial control systems, where reliable voltage and current handling are essential for consistent signal processing.
- Switching applications in power regulation modules requiring fast response and stable operation under varying loads.
- Driver stages for relay coils and solenoids, benefiting from the transistor??s efficient switching and current capacity.
- General-purpose industrial electronic circuits where compact packaging and thermal management improve overall device reliability.
2N5339QFN/TR Brand Info
The 2N5339QFN/TR is manufactured by a leading semiconductor provider known for high-quality discrete components tailored to industrial and power electronics markets. This product line emphasizes reliability, precision, and compliance with rigorous industry standards, ensuring engineers and sourcing specialists receive components that meet stringent performance and durability criteria. The QFN package reflects a modern approach to device integration, supporting compact design trends in electronics manufacturing.
FAQ
What is the maximum collector current for the 2N5339QFN/TR?
The maximum collector current of this transistor is 1.5 amperes. This rating ensures it can handle moderate power loads typical in medium power amplification and switching applications without compromising reliability.
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Which package type does this transistor use, and why is it beneficial?
This device is housed in a QFN (Quad Flat No-leads) package. The QFN format offers improved thermal performance and a smaller footprint on printed circuit boards, making it ideal for compact and thermally demanding industrial electronic designs.
What voltage limits should be observed when using this transistor?
The collector-emitter voltage is rated at 80 volts, while the collector-base voltage reaches up to 100 volts. Exceeding these limits can risk device breakdown, so design circuits should maintain voltages within these parameters for safe and reliable operation.
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Can this transistor operate at high frequencies?
Yes, with a transition frequency of up to 100 MHz, it supports fast switching operations suitable for many high-frequency industrial electronics applications, contributing to efficient power management and signal amplification.
What temperature range is this transistor rated for?
The operating junction temperature range spans from -65??C to +150??C, allowing it to function reliably in harsh industrial environments with wide temperature variations, enhancing the device??s versatility and durability.
