2N5339P-Transistor-PIND Overview
The 2N5339P-Transistor-PIND is a highly specialized phototransistor designed for use in Photo-Induced Noise Detection (PIND) applications, offering reliable and consistent performance. This transistor operates with a silicon planar epitaxial structure, optimized for light sensitivity and low noise characteristics. Engineered for industrial and aerospace environments, it provides stable operation under varying temperature ranges and electrical conditions. Its robust design ensures dependable signal detection in critical inspection processes. Sourcing this component from trusted suppliers like IC Manufacturer guarantees quality and compatibility for demanding electronic systems.
2N5339P-Transistor-PIND Key Features
- High photosensitivity: Enables accurate detection of light signals, improving noise identification in semiconductor inspection.
- Low dark current: Minimizes false signals, enhancing measurement precision and system reliability.
- Planar epitaxial silicon construction: Ensures consistent electrical characteristics and thermal stability across operating conditions.
- Hermetically sealed metal can package: Provides excellent environmental protection, enhancing long-term durability in industrial settings.
2N5339P-Transistor-PIND Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 30 | V |
| Collector Current (IC) | 50 | mA |
| Power Dissipation (PD) | 300 | mW |
| Peak Sensitivity Wavelength | 950 | nm |
| Dark Current (ID) | ??100 | nA |
| Rise Time | 1 | ??s |
| Operating Temperature Range | -65 to +200 | ??C |
| Package Type | Hermetically Sealed Metal Can | ?C |
2N5339P-Transistor-PIND Advantages vs Typical Alternatives
Compared to typical phototransistors, this device offers superior sensitivity and lower dark current, which translates to enhanced noise detection accuracy and reduced error rates. Its robust metal can package improves reliability under harsh environmental conditions, making it ideal for industrial and aerospace applications where consistent performance is critical. The planar epitaxial silicon design also ensures stable operation across a wide temperature range, outperforming many standard transistor options.
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Typical Applications
- PIND testing in semiconductor manufacturing to detect microscopic particles and contaminants with high precision, ensuring device quality and reliability.
- Optical sensing circuits requiring stable and sensitive phototransistor elements for accurate light detection and signal processing.
- Industrial quality control equipment that demands reliable photodetection under variable environmental conditions.
- Aerospace instrumentation where ruggedness and temperature tolerance are essential for dependable phototransistor performance.
2N5339P-Transistor-PIND Brand Info
This phototransistor is manufactured by a reputable semiconductor company known for high-quality, precision electronic components. The 2N5339P-Transistor-PIND reflects the brand??s commitment to delivering specialized devices tailored for industrial and aerospace applications. Its consistent manufacturing standards and rigorous testing ensure that each unit meets stringent performance and reliability criteria, supporting the needs of engineers and sourcing specialists in demanding sectors.
FAQ
What is the primary function of the 2N5339P-Transistor-PIND in electronic systems?
The primary function is to serve as a phototransistor optimized for detecting light-induced noise, particularly in PIND testing. It converts light signals into electrical currents with high sensitivity and low noise, enabling precise contamination detection in semiconductor devices and related quality control processes.
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How does the metal can package benefit the 2N5339P-Transistor-PIND??s performance?
The hermetically sealed metal can package protects the phototransistor from moisture, dust, and mechanical stress. This environmental shielding enhances reliability and longevity, especially in industrial and aerospace settings where components face harsh operating conditions.
What are the key electrical limits to consider when integrating this phototransistor?
Key electrical limits include a maximum collector-emitter voltage of 30 V and a collector current limit of 50 mA. Power dissipation should not exceed 300 mW to avoid degradation. These parameters ensure safe and reliable operation within device specifications.
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Is this transistor suitable for high-temperature environments?
Yes, the 2N5339P-Transistor-PIND can operate reliably in temperatures ranging from -65 ??C up to +200 ??C, making it well-suited for applications requiring wide temperature tolerance such as aerospace and industrial systems.
Can this phototransistor be used in general-purpose optical sensing?
While optimized for PIND testing, the device??s high sensitivity and low dark current also make it suitable for precise optical sensing applications that require stable and accurate light detection. However, its specialized design is best leveraged in noise detection scenarios.
