2N5339L-Transistor by ON Semiconductor – NPN Transistor, TO-18 Metal Can Package

2N5339L-Transistor Overview

The 2N5339L is a high-voltage NPN bipolar junction transistor (BJT) designed for amplification and switching applications. It features a maximum collector-base voltage of 120 V and collector current up to 1 A, making it suitable for medium-power electronic circuits. This transistor offers reliable performance in industrial and consumer electronics, ensuring stable operation under varying load conditions. Its robust construction supports efficient current gain and high voltage tolerance, making it an ideal component for engineers seeking dependable transistor solutions. For sourcing and technical details, visit IC Manufacturer.

2N5339L-Transistor Key Features

• High voltage capability: With a collector-base voltage rating of 120 V, it supports applications requiring significant voltage tolerance.
• Moderate collector current rating: Handles collector currents up to 1 A, suitable for medium power switching and amplification.
• Reliable current gain: Provides stable DC current gain, enhancing signal amplification efficiency in various circuits.
• Robust packaging: Encapsulated in a durable TO-18 metal can package, improving thermal dissipation and mechanical protection.

2N5339L-Transistor Technical Specifications

2N5339L-Transistor Advantages vs Typical Alternatives

This device offers a combination of high voltage tolerance and moderate current handling that typical low-voltage transistors cannot match, making it ideal for circuits requiring durability under higher stress. Its broad current gain range supports flexible amplification needs, while the TO-18 metal can package ensures superior thermal performance and mechanical robustness compared to plastic encapsulated alternatives. These characteristics collectively enhance reliability and integration in industrial electronics.

Typical Applications

• Medium-power amplifier stages in analog and signal processing circuits, where stable gain and voltage resistance are critical for performance.
• Switching circuits in power control applications, benefiting from its ability to handle collector currents up to 1 A.
• High voltage driver circuits requiring reliable transistor operation at voltages up to 120 V.
• Industrial control systems where robust packaging and electrical stability under varying loads are essential.

2N5339L-Transistor Brand Info

The 2N5339L transistor is a well-established product in the semiconductor market, manufactured by trusted suppliers specializing in industrial-grade electronic components. Known for its consistent quality and adherence to industry standards, this device is favored in applications that demand high voltage endurance and dependable amplification. Its availability through authorized distributors ensures ease of procurement for engineers and sourcing specialists.

FAQ

What is the maximum voltage rating of the 2N5339L transistor?

The transistor has a maximum collector-base voltage rating of 120 V and a collector-emitter voltage rating of 100 V. This makes it suitable for circuits operating at relatively high voltages without risking breakdown.

What current levels can it handle safely?

This device supports a continuous collector current of up to 1 A, allowing it to manage moderate power levels in switching and amplification applications without overheating or damage.

What type of package does the 2N5339L use?

It is housed in a TO-18 metal can package, which offers excellent thermal dissipation and mechanical protection, improving reliability in industrial environments.

How does the current gain vary for this transistor?

The DC current gain (hFE) ranges from 40 to 320, providing flexibility for different circuit designs that require variable amplification factors depending on operating conditions.

Is this transistor suitable for high-frequency applications?

The transition frequency of approximately 15 MHz indicates moderate speed, making it suitable for many audio and general-purpose signal amplification tasks but less ideal for very high-frequency RF applications.