2N5339-Transistor by ON Semiconductor – NPN Transistor, TO-18 Metal Can Package

  • This transistor amplifies or switches electronic signals, enabling efficient circuit control and signal processing.
  • It features a specific voltage or current rating that ensures stable operation under typical load conditions.
  • The package design offers a compact footprint, aiding in board-space savings and easier integration.
  • Ideal for use in low-power amplification or switching applications, improving overall device responsiveness.
  • Manufactured with strict quality controls to maintain consistent performance and long-term reliability.
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产品上方询盘

2N5339-Transistor Overview

The 2N5339 is a high-performance NPN bipolar junction transistor designed for medium power amplification and switching applications. It offers reliable operation with a maximum collector current of 1.5A and a collector-emitter voltage rating up to 100V, making it suitable for a wide range of industrial and electronic circuits. The transistor features a complementary PNP counterpart, facilitating push-pull amplifier designs and other complementary circuits. Its robust design ensures consistent performance in demanding environments. For detailed sourcing and technical support, visit IC Manufacturer.

2N5339-Transistor Key Features

  • High voltage handling: Supports up to 100V collector-emitter voltage, enabling use in high-voltage industrial circuits.
  • Medium power capability: With a collector current rating of 1.5A, it efficiently manages moderate power loads.
  • Complementary pairing: Designed as the NPN counterpart to the 2N5338 PNP transistor, simplifying push-pull amplifier design and complementary circuit integration.
  • Enhanced gain characteristics: Provides reliable current gain for signal amplification, ensuring stable operation across temperature variations.

2N5339-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (Vceo) 100 V
Collector-Base Voltage (Vcbo) 120 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 1.5 A
Power Dissipation (Pd) 30 W
Current Gain (hFE) 30 to 120 (varies with Ic and Vce)
Transition Frequency (fT) 40 MHz (typical)
Package Type TO-39 Metal Can

2N5339-Transistor Advantages vs Typical Alternatives

This transistor stands out with its high voltage rating and medium power handling capacity, providing greater versatility compared to lower voltage or lower current alternatives. The ability to pair seamlessly with its PNP complement allows for efficient push-pull configurations, improving circuit linearity and reducing distortion. Its robust construction and stable gain characteristics ensure reliable performance in demanding industrial environments, making it a dependable choice for engineers seeking a durable and effective transistor solution.

Typical Applications

  • Medium power linear amplifiers: Ideal for audio and signal amplification circuits requiring moderate power handling and stable gain.
  • Switching circuits: Suitable for use in switching regulators and relay driving circuits due to its high voltage and current ratings.
  • Complementary amplifier stages: Works effectively in push-pull amplifier designs when paired with its complementary PNP transistor.
  • Industrial control circuits: Applicable in control systems where reliable switching and amplification of moderate power signals are essential.

2N5339-Transistor Brand Info

The 2N5339 transistor is a widely recognized component within the semiconductor industry, valued for its reliable performance in medium power applications. Produced under established manufacturing standards, it maintains consistent quality and longevity, making it a trusted choice for sourcing specialists and design engineers. Its classic TO-39 metal can package provides excellent thermal dissipation, further enhancing durability. This product is supported by numerous distributors and IC manufacturers, ensuring availability and technical assistance throughout the product lifecycle.

FAQ

What is the maximum collector current rating for this transistor?

The transistor supports a maximum continuous collector current of 1.5 amperes, which allows it to handle moderate power loads in various amplification and switching applications.

Can this transistor be used in high voltage circuits?

Yes, with a collector-emitter voltage rating of up to 100 volts and collector-base voltage up to 120 volts, it is suitable for use in high voltage electronic circuits requiring reliable switching and amplification.

What package type does the 2N5339 use?

This device is housed in a TO-39 metal can package, which offers enhanced thermal conductivity and mechanical durability, beneficial for industrial and rugged applications.

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产品中间询盘

Is the 2N5339 transistor suitable for push-pull amplifier designs?

Absolutely. It is designed as an NPN transistor complementary to the PNP 2N5338, making the pair ideal for push-pull amplifiers that require matched transistor characteristics for balanced performance.

What is the typical current gain range for this transistor?

The current gain (hFE) typically ranges from 30 to 120 depending on collector current and voltage conditions, providing flexibility in circuit design for various amplification needs.

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