2N5039-Transistor by ON Semiconductor ?C High-Gain NPN Transistor, TO-18 Package

  • This transistor amplifies electrical signals, enabling precise control in various electronic circuits.
  • It offers stable performance under typical operating conditions, ensuring consistent signal amplification.
  • The compact package reduces board space, facilitating efficient layout in dense electronic assemblies.
  • Ideal for use in audio amplification systems, it helps improve sound clarity and signal strength.
  • Manufactured to meet standard reliability criteria, it supports long-term operation in demanding environments.
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2N5039-Transistor Overview

The 2N5039 transistor is a precision silicon NPN transistor designed for low noise and high gain applications. It is optimized for use in low-level amplifier circuits, measuring instruments, and other sensitive electronic devices requiring reliable performance with minimal signal distortion. Featuring a low noise figure and stable gain characteristics, this transistor ensures consistent operation across a wide range of temperatures and frequencies. Its robust construction supports long-term reliability in industrial and instrumentation environments. For sourcing or detailed specifications, visit IC Manufacturer.

2N5039-Transistor Key Features

  • Low Noise Performance: Enables superior signal clarity in sensitive amplifiers, enhancing measurement accuracy.
  • High Current Gain (hFE): Provides amplification efficiency, reducing the need for additional amplification stages in circuit design.
  • Stable Operation Across Temperature: Maintains consistent electrical characteristics, ensuring dependable functionality in variable industrial conditions.
  • Durable Silicon Construction: Offers long-term reliability and resistance to environmental stress, lowering maintenance requirements.

2N5039-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN Silicon ?C
Collector-Emitter Voltage (Vceo) 30 V
Collector-Base Voltage (Vcbo) 40 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 100 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 200 to 500 ?C
Transition Frequency (fT) 100 MHz
Noise Figure (NF) Low dB

2N5039-Transistor Advantages vs Typical Alternatives

This transistor delivers enhanced sensitivity and low noise performance compared to standard low-power transistors. Its high gain and stable operation reduce circuit complexity and improve signal integrity. When reliability and precision are critical, this device offers superior environmental resilience and consistent gain, making it a preferred choice over typical general-purpose transistors in instrumentation and amplifier applications.

Typical Applications

  • Low-noise preamplifiers in audio and measurement instruments, enabling accurate signal amplification with minimal distortion and interference.
  • Sensors and transducer interface circuits, where stable amplification of weak signals is essential for reliable data acquisition.
  • General-purpose amplification in industrial control systems, providing efficient gain and robust operation under varied conditions.
  • High-frequency switching circuits requiring quick response and low signal degradation for improved system performance.

2N5039-Transistor Brand Info

The 2N5039 transistor is a well-established product in the semiconductor industry, recognized for its precision and reliability. Manufactured under stringent quality control, it represents a trusted solution in analog signal processing and amplification. Its consistent performance and proven robustness make it a staple component for engineers designing high-fidelity electronic circuits and instrumentation systems.

FAQ

What type of transistor is the 2N5039?

The 2N5039 is an NPN silicon transistor specifically designed for low noise and high gain applications, making it suitable for precision amplification tasks in various electronic circuits.

What is the maximum collector current this transistor can handle?

This device supports a maximum collector current of 100 milliamps, which is adequate for many low-power amplifier and signal processing applications.

How does the 2N5039 perform in terms of noise?

The transistor exhibits a low noise figure, which is critical for reducing signal distortion in sensitive circuits such as audio preamplifiers and instrumentation amplifiers.

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What voltage ratings should be considered when using this transistor?

Key voltage ratings include a collector-emitter voltage of 30 V, collector-base voltage of 40 V, and emitter-base voltage of 5 V, ensuring safe operation within these limits to prevent damage.

Can the 2N5039 be used in high-frequency applications?

Yes, with a transition frequency of approximately 100 MHz, this transistor is suitable for moderate high-frequency amplification and switching tasks, supporting a range of industrial and instrumentation uses.

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